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{{contentbydryetch}}
== Process B ==
== Process B ==


Process B is labelled Via (30μm diameter) 100μm depth. In the acceptance test the process was run on a 150 mm SPTS wafer with 12-13 % etch load.
Process B was run on a 150 mm wafer with 12-13 % etch load.  


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=== Results ===
=== Results ===


A number of wafers are patterned with the [[Specific Process Knowledge/Photolithography/masks/travka|travka masks]] in 4 microns of AZ photoresist. The wafers are then etched using two different durations of process B in the DRIE-Pegasus.
A number of wafers are patterned with the [[Specific Process Knowledge/Pattern Design/Travka|Travka mask set]] in 4 microns of AZ photoresist. The wafers are then etched using two different durations of process B in the DRIE-Pegasus.


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After etching each wafer is cleaved in two places: Both cleavage lines run across the [[Specific Process Knowledge/Photolithography/masks/travka/fields/Aline| A-line fields]].
 
 
After etching each wafer is cleaved in two places: Both cleavage lines run across the [[Specific Process Knowledge/Pattern Design/Travka/fields/Aline|A-line fields]]. This produces three sites on each wafer where the depth of the trenches can be determined using an SEM.
 


<gallery caption="The results of process B after 17 and 34 cycles of etching"  widths="500" heights="350" perrow="2">
<gallery caption="The results of process B after 17 and 34 cycles of etching"  widths="500" heights="350" perrow="2">
image:Travkatesting1a.jpg|  
image:Travkatesting1a.jpg|
image:Travkatesting1b.jpg|The 60 nm trenches
image:Travkatesting1b.jpg|
</gallery>
</gallery>
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