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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/processB click here]'''
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{{contentbydryetch}}
== Process B ==
== Process B ==


Process B is labelled Via (30μm diameter) 100μm depth. In the acceptance test the process was run on a 150 mm SPTS wafer with 12-13 % etch load.
Process B was run on a 150 mm wafer with 12-13 % etch load.  


{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
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=== Results ===
=== Results ===


A number of wafers are patterned with the [[Specific Process Knowledge/Photolithography/masks/travka|travka masks]] in 4 microns of AZ photoresist. The wafers are then etc
A number of wafers are patterned with the [[Specific Process Knowledge/Pattern Design/Travka|Travka mask set]] in 4 microns of AZ photoresist. The wafers are then etched using two different durations of process B in the DRIE-Pegasus.


{| border="2" cellpadding="2" cellspacing="1"
{|
| STYLE="vertical-align: top"|
{| border = 1
|+ '''Wafers'''
|-
|-
! Wafer number
! width="70" |Wafer number
! Mask
! width="70" |Mask
! Process B duration
! Process B duration
|-
|-
| 1
| 2
| Travka 05
| Travka 05
| 17 cycles or 3:07 mins
| 17 cycles, 3:07 mins
|-
|-
| 2
| 3
| Travka 05
| Travka 05
| 34 cycles or 6:14 mins
| 34 cycles, 6:14 mins
|-
|-
| 4
| 5
| Travka 10
| Travka 10
| 17 cycles or 3:07 mins
| 17 cycles, 3:07 mins
|-
|-
| 5
| 6
| Travka 10
| Travka 10
| 34 cycles or 6:14 mins
| 34 cycles, 6:14 mins
|-
|-
| 7
| 8
| Travka 20
| Travka 20
| 17 cycles or 3:07 mins
| 17 cycles, 3:07 mins
|-
|-
| 8
| 9
| Travka 20
| Travka 20
| 34 cycles or 6:14 mins
| 34 cycles, 6:14 mins
|}
| STYLE="vertical-align: top"|
{| border = 1
|+ '''Wafers'''
|-
! width="70" |Wafer number
! width="70" |Mask
! Process B duration
|-
|-
| 10
| 11
| Travka 35
| Travka 35
| 17 cycles or 3:07 mins
| 17 cycles, 3:07 mins
|-
|-
| 11
| 12
| Travka 35
| Travka 35
| 34 cycles or 6:14 mins
| 34 cycles, 6:14 mins
|-
|-
| 13
| 14
| Travka 50
| Travka 50
| 17 cycles or 3:07 mins
| 17 cycles, 3:07 mins
|-
|-
| 14
| 15
| Travka 50
| Travka 50
| 34 cycles or 6:14 mins
| 34 cycles, 6:14 mins
|-
|-
| 16
| 17
| Travka 65
| Travka 65
| 17 cycles or 3:07 mins
| 17 cycles, 3:07 mins
|-
|-
| 17
| 18
| Travka 65
| Travka 65
| 34 cycles or 6:14 mins
| 34 cycles, 6:14 mins
|}
|}
|}
After etching each wafer is cleaved in two places: Both cleavage lines run across the [[Specific Process Knowledge/Pattern Design/Travka/fields/Aline|A-line fields]]. This produces three sites on each wafer where the depth of the trenches can be determined using an SEM.




<gallery caption="The results of process B after 17 and 34 cycles of etching"  widths="500" heights="350" perrow="2">
<gallery caption="The results of process B after 17 and 34 cycles of etching"  widths="500" heights="350" perrow="2">
image:Travkatesting1a.jpg|  
image:Travkatesting1a.jpg|
image:Travkatesting1b.jpg|The 60 nm trenches
image:Travkatesting1b.jpg|
</gallery>
</gallery>
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