Specific Process Knowledge/Etch/OES: Difference between revisions
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<!-- Page reviewed 28/6-2023 jmli --> | |||
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=Optical endpoint detection on the dry etch tools at DTU Nanolab= | =Optical endpoint detection on the dry etch tools at DTU Nanolab= | ||
Several dry etch tools at DTU Nanolab are equipped with an endpoint detection system. Out of those systems only one is not of the type optical endpoint detection. The instruments are: | Several dry etch tools at DTU Nanolab are equipped with an endpoint detection system. Out of those systems only one is not of the type optical endpoint detection. The instruments are: | ||
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* III-V ICP | * III-V ICP | ||
* Pegasus 1 | * Pegasus 1 | ||
* Pegasus 2 | |||
* Pegasus 4 | * Pegasus 4 | ||
The section below describes the principle behind the optical endpoint detection system. | The section below describes the principle behind the optical endpoint detection system. | ||
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The light emitted from the plasma is collected through a view port in the process chamber - preferably directly facing the plasma itself above the wafer. A lens is mounted to focus the light onto an optical fiber feeding it to a spectrometer. The Verity spectrograph and SD1024 controller with SpectraView software are installed on the tools in the list above. It has a 200 nm to 800 nm range with a 0.5 nm step enabling the simultaneous monitoring of any number of narrow bandwidths as a function of time. | The light emitted from the plasma is collected through a view port in the process chamber - preferably directly facing the plasma itself above the wafer. A lens is mounted to focus the light onto an optical fiber feeding it to a spectrometer. The Verity spectrograph and SD1024 controller with SpectraView software are installed on the tools in the list above. It has a 200 nm to 800 nm range with a 0.5 nm step enabling the simultaneous monitoring of any number of narrow bandwidths as a function of time. | ||
''' | '''Example: The etching of silicon by fluorine:'''<br> | ||
The table below contains the most important emission lines for some of the species in dry etching. | |||
The | |||
{| border="2" cellspacing="1" cellpadding="1" | {| border="2" cellspacing="1" cellpadding="1" | ||
| align="center" style="background:#f0f0f0;"|'''Monitored species''' | | align="center" style="background:#f0f0f0;"|'''Monitored species''' | ||
| align="center" style="background:#f0f0f0;" width="120px"|'''Wavelength (nm)''' | | align="center" style="background:#f0f0f0;" width="120px"|'''Wavelength (nm)''' | ||
| | | width="20"| | ||
| align="center" style="background:#f0f0f0;"|'''Monitored species''' | | align="center" style="background:#f0f0f0;"|'''Monitored species''' | ||
| align="center" style="background:#f0f0f0;" width="120px"|'''Wavelength (nm)''' | | align="center" style="background:#f0f0f0;" width="120px"|'''Wavelength (nm)''' | ||
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|- | |- | ||
|} | |} | ||
'''SpectraView:'''<br> | |||
At the center of the SpectraView software is the configuration file (*.svc file) that dictates what to be done. | |||
Below is a figure | |||
[[file:image010.jpg |1500px|frameless ]] | |||
== Process considerations == | |||
'''The intensity of the light:'''<br> | |||
The intensity of the light will depend on whether the molecule is a reactant or an etch product: | |||
# Reactant: The concentration in the plasma: | |||
## The carrier gas flow rate | |||
## The RF power (both coil and platen) | |||
## The process pressure | |||
# Etch product: | |||