|
|
| (6 intermediate revisions by the same user not shown) |
| Line 1: |
Line 1: |
| '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Characterization/XPS/XPS_Depth_profiling click here]''' | | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Characterization/XPS/XPS_Depth_profiling click here]''' |
| | <!--Checked for updates on 24/8-2021. ok/ jmli--> |
| | <!-- Page reviewed 8/5-2023 jmli --> |
| | {{Author-jmli1}} |
| | <!--Checked for updates on 4/9-2025 - ok/jmli --> |
|
| |
|
| =Depth profiling= | | =Depth profiling= |
| Line 15: |
Line 19: |
| * Polysilicon | | * Polysilicon |
|
| |
|
| [[File:profile sandwich 3.PNG|700px]] | | [[File:profile sandwich 3.PNG|700px|{{photo1}}]] |
|
| |
|
| In the spectra required to make such a depth profile, one can distinguish the various chemical environments of silicon depending on whether it is bonded to: | | In the spectra required to make such a depth profile, one can distinguish the various chemical environments of silicon depending on whether it is bonded to: |
| Line 22: |
Line 26: |
| * Nitrogen, also fully oxidized (oxidation state IV) | | * Nitrogen, also fully oxidized (oxidation state IV) |
| and plot their atomic percentages along with the percentages of oxygen and nitrogen. | | and plot their atomic percentages along with the percentages of oxygen and nitrogen. |
|
| |
|
| |
| == asdf ==
| |
|
| |
|
| |
|
| |
| {| border="1" cellpadding="0" cellspacing="0" style="text-align:center;"
| |
| | width="40" align="center" style="background:#f0f0f0;"|
| |
| | width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Optical_microscope| Optical Micro- scopes]]'''
| |
| | width="40" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy|SEM (incl. EDX)]]'''
| |
| | width="40" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/AFM: Atomic Force Microscopy|AFM]]'''
| |
| | width="40" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/Profiler|Stylus profiler]]'''
| |
| | width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Profiler#Optical_Profiler_.28Sensofar.29|Optical profiler]]'''
| |
| | width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Optical_characterization#Filmtek_4000|Filmtek (reflec- tometer)]]'''
| |
| | width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer|Ellip- someter]]'''
| |
| | width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Thickness stylus]]'''
| |
| | width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/XPS#XPS-ThermoScientific|XPS]]'''
| |
| | width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/PL_mapper|PL mapper]]'''
| |
| | width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/4-Point_Probe|4-point probe]]'''
| |
| | width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Probe_station|Probe station]]'''
| |
| | width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/XRD|XRD]]'''
| |
| | width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Lifetime_scanner_MDPmap|Life time scanner]]'''
| |
| | width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Drop_Shape_Analyzer|Drop shape analyser]]'''
| |
| | width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/Hardness_measurement|Hardness tester]]'''
| |
| | width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/DSC_Perkin_Elmer|Differen- tial Scan- ning Calori- meter DSC]]'''
| |
| | width="40" align="center" style="background:#f0f0f0;"|'''[[Specific_Process_Knowledge/Characterization/KLA-Tencor_Surfscan_6420|Surfscan]]'''
| |
| | width="40" align="center" style="background:#f0f0f0;"|'''IR-camera'''
| |
| | width="40" align="center" style="background:#f0f0f0;"|'''[[Specific Process Knowledge/Characterization/III-V_ECV-profiler|III-V ECV-profiler]]'''
| |
| |-
| |
| |-style="background:#C0C0C0;" align="center"
| |
| |align="left"| Breakdown voltage
| |
| ||||||||||||||||||||||||||||||||||||||||
| |
| |-
| |
| |-style="background:#DCDCDC;" align="center"
| |
| |align="left"| Carrier density/doping profile
| |
| ||||||||||||||||||||||||||||||||||||||||x
| |
|
| |
| |-
| |
| |-style="background:#DCDCDC;" align="center"
| |
| |align="left"| Charge carrier life time||||||||||||||||||||||||||||x||||||||||||
| |
| |-
| |
| |-style="background:#C0C0C0;" align="center"
| |
| |align="left"| Contact angle hydrophobic/hydrophillic||||||||||||||||||||||||||||||x||||||||||
| |
| |-
| |
| |-style="background:#DCDCDC;" align="center"
| |
| |align="left"| Crystallinity||||||||||||||||||||||||||x||||||||x||||||
| |
| |-
| |
| |-style="background:#C0C0C0;" align="center"
| |
| |align="left"| Deposition uniformity||||||||||x||x||x||||||||||||||||||||||||||
| |
| |-
| |
| |-style="background:#DCDCDC;" align="center"
| |
| |align="left"| Dimensions(in plane)||x||x||(x)||(x)||x||||||||||||||||||||||||||||||
| |
| |-
| |
| |-style="background:#C0C0C0;" align="center"
| |
| |align="left"|[[Specific_Process_Knowledge/Characterization/Topographic_measurement|Dimensions(height)]]||(x)||(x)||x||x||x||||||||||||||||||||||||||||||
| |
| |-
| |
| |-style="background:#DCDCDC;" align="center"
| |
| |align="left"| Electrical conductivity||||||||||||||||||||||||x||||||||||||||||
| |
| |-
| |
| |-style="background:#C0C0C0;" align="center"
| |
| |align="left"| [[Specific_Process_Knowledge/Characterization/Element_analysis|Element analysis]]||||x||||||||||||||x||x 4)||||||x 4)||||||||||||||
| |
| |-
| |
| |-style="background:#DCDCDC;" align="center"
| |
| |align="left"| [[Specific_Process_Knowledge/Characterization/Stress_measurement|Film stress]]||||||||x||||||||||||||||||x||||||||||||||
| |
| |-
| |
| |-style="background:#C0C0C0;" align="center"
| |
| |align="left"|[[Specific_Process_Knowledge/Characterization/Sample_imaging|Imaging]]||x||x||x||||x||||||||||||||||||||||||||||||
| |
| |-
| |
| |-style="background:#DCDCDC;" align="center"
| |
| |align="left"| [[Specific_Process_Knowledge/Characterization/Hardness_measurement|Material Hardness]]||||||||||||||||||||||||||||||||x||||||||
| |
| |-
| |
| |-style="background:#C0C0C0;" align="center"
| |
| |align="left"| Band gap||||||||||||||x||||||x||||||||||||||||||||
| |
| |-
| |
| |-style="background:#DCDCDC;" align="center"
| |
| |align="left"| Particles||x||x||x||||||||||||||||||||||||||||||x||||
| |
| |-
| |
| |-style="background:#C0C0C0;" align="center"
| |
| |align="left"| Phase changes||||||||||||||||||||||||||||||||||x||||||
| |
| |-
| |
| |-style="background:#DCDCDC;" align="center"
| |
| |align="left"| Reflectivity||||||||||||x||x||||||x 6)||||||||||||||||||||
| |
| |-
| |
| |-style="background:#C0C0C0;" align="center"
| |
| |align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Refractive index]]||||||||||||x||x||||||||||||||||||||||||||
| |
| |-
| |
| |-style="background:#DCDCDC;" align="center"
| |
| |align="left"| Resistivity||||||||||||||||||||||x||||||||||||||||||
| |
| |-
| |
| |-style="background:#C0C0C0;" align="center"
| |
| |align="left"| Step coverage||x 1)||x 1)||||||||||||||||||||||||||||||||||||
| |
| |-
| |
| |-style="background:#DCDCDC;" align="center"
| |
| |align="left"| Surface roughness||||||x||x||x||||||||||||||||||||||||||||||
| |
| |-
| |
| |-style="background:#C0C0C0;" align="center"
| |
| |align="left"| Thermal conductivity||||||||||||||||||||||||||||||||||||||||
| |
| |-
| |
| |-style="background:#DCDCDC;" align="center"
| |
| |align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Thin film thickness]]||x 1)||x 1)||x 2)||x 2)||x ||x||x||||||x 5)||x 3)||||x||||||||||||||
| |
| |-
| |
| |-style="background:#C0C0C0;" align="center"
| |
| |align="left"| Voids in wafer bonding||x||||||||||||||||||x||||||||||||||||||x||
| |
| |-
| |
| |-style="background:#DCDCDC;" align="center"
| |
| |align="left"| [[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Wafer thickness]]||x 1)||x 1)||||||||||||x||||||||||||||||||||||||
| |
|
| |
| |-
| |
|
| |
|
| |
| |
| |
| |}
| |
