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Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly4: Difference between revisions

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Created page with " {| border="2" cellpadding="0" cellspacing="0" style="text-align:center;" |+ '''Process runs''' |- ! rowspan="2" width="40"| Date ! colspan="4" width="120"| Substrate Informat..."
 
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{| border="2" cellpadding="0" cellspacing="0" style="text-align:center;"
{| border="2" cellpadding="0" cellspacing="0" style="text-align:center;"
|+ '''Process runs'''
|+ '''Process runs'''
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| Pegasus/jmli
| Pegasus/jmli
| 10 minute TDESC clean + 45 sec barc etch
| 10 minute TDESC clean + 45 sec barc etch
| danchip/jml/showerhead/Cpoly4, 20 cycles or 2:16 minutes  
| nanolab/jml/showerhead/Cpoly4, 20 cycles or 2:16 minutes  
| S004733
| S004733
| New showerhead  
| New showerhead