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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/nanoetch click here]'''
<!--Checked for updates on 30/7-2018 - ok/jmli -->
<!--Checked for updates on 5/10-2020 - ok/jmli -->
<!--Checked for updates on 4/9-2025 - ok/jmli -->
== Development of continuous nanoetch ==
== Development of continuous nanoetch ==
{{Template:Author-jmli1}}
<!--Checked for updates on 2/02-2023 - ok/jmli -->


The recipes below have been run on 2" wafers with 30/60/90/120/150 nm lines in zep resist. The wafers were crystalbonded to a 4" oxide carrier leaving only a very small fraction (much less than 1% ) of silicon to be etched. If you intend to etch most of the surface of the wafer to create very small posts or ridges (rather than holes or trenches)


{| border="2" cellspacing="0" cellpadding="3" style="text-align:center;"
The most used one is the nano1.42 recipe - to access the results, click on the bold link in the bottom of the table.
 
 
 
{| border="2" cellspacing="1" cellpadding="3" style="text-align:center;"
!Recipe
!Recipe
!nano1.0
!nano1.0
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|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142|Images]]
|'''[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142|Images]]'''
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano143|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano143|Images]]
|-
|-
|}
|}


*[[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP Metal Etch nanoetch]]
 
 
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano|Etch of nanostructures in silicon on the ICP Metal Etcher]]
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2|Nanoetch contest: DRIE-Pegasus versus ASE (nano1.42 versus pxnano2)]]
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2|Nanoetch contest: DRIE-Pegasus versus ASE (nano1.42 versus pxnano2)]]


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On the basis of the pxnano2 recipe from the ASE we will try to make a similar Bosch process on the Pegasus.  
On the basis of the pxnano2 recipe from the ASE we will try to make a similar Bosch process on the Pegasus.  


{| border="2" cellspacing="1" cellpadding="3" style="text-align:center;"
 
!Recipe
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
!
|+ '''Process parameters'''
!
!
!
!
!
!
!
!
|-
|-
!C<sub>4</sub>F<sub>8</sub> (sccm)
! rowspan="2" width="100"| Recipe
|
! rowspan="2" width="20"| Step
|
! rowspan="2" width="20"| Temp.
|
! colspan="6" | Deposition step
|
! colspan="7" | Etch step
|
! colspan="2" | Process observations
|
|
|
|
|-
|-
!SF<sub>6</sub> (sccm)
! width="40" | Time
|
! width="40" | Pressure
|
! width="40" | C<sub>4</sub>F<sub>8</sub>
|
! width="40" | SF<sub>6</sub>
|
! width="40" | O<sub>2</sub>
|
! width="40" | Coil
|
! width="40" | Time
|
! width="40" | [[Specific Process Knowledge/Etch/DRIE-Pegasus/Parameters| Pressure]]
|
! width="40" | C<sub>4</sub>F<sub>8</sub>
|
! width="40" | SF<sub>6</sub>
! width="40" | O<sub>2</sub>
! width="40" | Coil
! width="40" | Platen
! width="40" | [[Specific Process Knowledge/Etch/DRIE-Pegasus/Parameters| Hardware]]
! width="40" | Runs
|-
|-
!O<sub>2</sub> (sccm)
! nanobosch6
|
| A
|
| 20
|
| 2.5
|
| 10
|
| 50
|
| 0
|
| 0
|
| 500
|
| 5.0
| 10
| 40
| 60
| 5
| 350
| 30
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nanobosch6 | Click]]
|-
|-
! Coil power (W)
! nb-1.0
|
| A
|
| 20
|
| 2.5
|
| 10
|
| 50
|
| 0
|
| 0
|
| 500
|
| 5.0
| 10
| 50
| 50
| 5
| 350
| 30
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.0 | Click]]
|-
|-
!Platen power (W)
! nb-1.1
|
| A
|
| 20
|
| 2.5
|
| 10
|
| 50
|
| 0
|
| 0
|
| 500
|
| 5.0
| 10
| 50
| 50
| 5
| 350
! 50
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.1 | Click]]
|-
|-
! Pressure (mtorr)
! nb-1.2
|
| A
|
| 20
|
| 2.5
|
| 10
|
| 50
|
| 0
|
| 0
|
| 500
|
| 5.0
| 10
| 50
| 50
| 5
! 500
| 50
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.2 | Click]]
|-
|-
! Temperature (degs C)
! barcstrip
|
| A
|
| 20
|
|
|
|
|
|
|
|
|
|
|
|  
|
| 30
| 4 (3@15)
| 0
| 0
| 40
! 200
| 20
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/barcstrip | Click]]
|-
|-
! Process time (s)
! nanobosch7
|
| A
|
| 20
|
| 2.5
|
| 10
|
| 50
|
| 0
|
| 0
|
| 500
|
| 5.0
| 10
| 40
| 60
| 5
| 350
| 30
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nanobosch7 | Click]]
|-
|-
! colspan="10" align="center"| Etch rates (nm/min)
 
|-
 
| Averages||.||.||.||.||.||.||.||.||.
|-
| Std. Dev||.||.||.||.||.||.||.||.||.
|-
! colspan="10" align="center"| Zep etch rate (nm/min)
|-
|  Averages||.||.||.||.||.||.||.||.||.
|-
! colspan="10" align="center"| Sidewall angle (degrees)
|-
| Averages||.||.||.||.||.||.||.||.||.
|-
| Std. Dev||.||.||.||.||.||.||.||.||.
|-
! colspan="10" align="center"| CD loss (nm pr edge)
|-
| Averages||.||.||.||.||.||.||.||.||.
|-
| Std. Dev||.||.||.||.||.||.||.||.||.
|-
! colspan="10" align="center"| Bowing (nm)
|-
| Averages||.||.||.||.||.||.||.||.||.
|-
| Std. Dev||.||.||.||.||.||.||.||.||.
|-
! colspan="10" align="center"| Bottom curvature
|-
| Averages||.||.||.||.||.||.||.||.||.
|-
| Std. Dev||.||.||.||.||.||.||.||.||.
|-
|-
! Images
!       <!-- recipe name -->
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano10|Images]]
|       <!-- step -->
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano11|Images]]
|       <!-- chiller temperature -->
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano12|Images]]
|       <!-- dep time -->
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano13|Images]]
|       <!-- dep pressure -->
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano121|Images]]
|       <!-- dep C4F8 flow -->
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14|Images]]
|       <!-- dep SF6 flow -->
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141|Images]]
|       <!-- dep O2 flow -->
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142|Images]]
|       <!-- dep coil power -->
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano143|Images]]
|       <!-- etch time -->
|       <!-- etch pressure -->
|       <!-- etch C4F8 flow -->
|       <!-- etch SF6 flow -->
|       <!-- etch O2 flow -->
!      <!-- etch coil power -->
|       <!-- etch platen power -->
| LF+B100      <!-- hardware -->
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.2 | Click]]
|-
|-
|}
|}
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