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{| border="2" cellspacing="1" cellpadding="3" align="center"
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/nanoetch click here]'''
<!--Checked for updates on 30/7-2018 - ok/jmli -->
<!--Checked for updates on 5/10-2020 - ok/jmli -->
<!--Checked for updates on 4/9-2025 - ok/jmli -->
== Development of continuous nanoetch ==
{{Template:Author-jmli1}}
<!--Checked for updates on 2/02-2023 - ok/jmli -->
 
The recipes below have been run on 2" wafers with 30/60/90/120/150 nm lines in zep resist. The wafers were crystalbonded to a 4" oxide carrier leaving only a very small fraction (much less than 1% ) of silicon to be etched. If you intend to etch most of the surface of the wafer to create very small posts or ridges (rather than holes or trenches)
 
The most used one is the nano1.42 recipe - to access the results, click on the bold link in the bottom of the table.
 
 
 
{| border="2" cellspacing="1" cellpadding="3" style="text-align:center;"
!Recipe
!Recipe
!nano1.0
!nano1.0
Line 99: Line 113:
|120
|120
|-
|-
! colspan="9" align="center"| Etch rates (nm/min)
! colspan="10" align="center"| Etch rates (nm/min)
|-
|-
| Averages||295||228||299||235||183||183||166||160||148
| Averages||295||228||299||235||183||183||166||160||148
Line 127: Line 141:
| Std. Dev||7||6||4||3||2||2||2||3||1
| Std. Dev||7||6||4||3||2||2||2||3||1
|-
|-
! colspan="10" align="center"| Botton curvature
! colspan="10" align="center"| Bottom curvature
|-
|-
| Averages||-45||-45||-44||-43||-32||-32||-34||-32||-39
| Averages||-45||-45||-44||-43||-32||-32||-34||-32||-39
Line 141: Line 155:
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142|Images]]
|'''[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142|Images]]'''
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano143|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano143|Images]]
|-
|-
|}
|}


*[[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP Metal Etch nanoetch]]


The nanoetch
 
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano|Etch of nanostructures in silicon on the ICP Metal Etcher]]
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2|Nanoetch contest: DRIE-Pegasus versus ASE (nano1.42 versus pxnano2)]]
 
== Development of switched nanoetch process ==
 
On the basis of the pxnano2 recipe from the ASE we will try to make a similar Bosch process on the Pegasus.
 
 
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''Process parameters'''
|-
! rowspan="2" width="100"| Recipe
! rowspan="2" width="20"| Step
! rowspan="2" width="20"| Temp.
! colspan="6" | Deposition step
! colspan="7" | Etch step
! colspan="2" | Process observations
|-
! width="40" | Time
! width="40" | Pressure
! width="40" | C<sub>4</sub>F<sub>8</sub>
! width="40" | SF<sub>6</sub>
! width="40" | O<sub>2</sub>
! width="40" | Coil
! width="40" | Time
! width="40" | [[Specific Process Knowledge/Etch/DRIE-Pegasus/Parameters| Pressure]]
! width="40" | C<sub>4</sub>F<sub>8</sub>
! width="40" | SF<sub>6</sub>
! width="40" | O<sub>2</sub>
! width="40" | Coil
! width="40" | Platen
! width="40" | [[Specific Process Knowledge/Etch/DRIE-Pegasus/Parameters| Hardware]]
! width="40" | Runs
|-
! nanobosch6
| A
| 20
| 2.5
| 10
| 50
| 0
| 0
| 500
| 5.0
| 10
| 40
| 60
| 5
| 350
| 30
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nanobosch6 | Click]]
|-
! nb-1.0
| A
| 20
| 2.5
| 10
| 50
| 0
| 0
| 500
| 5.0
| 10
| 50
| 50
| 5
| 350
| 30
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.0 | Click]]
|-
! nb-1.1
| A
| 20
| 2.5
| 10
| 50
| 0
| 0
| 500
| 5.0
| 10
| 50
| 50
| 5
| 350
! 50
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.1 | Click]]
|-
! nb-1.2
| A
| 20
| 2.5
| 10
| 50
| 0
| 0
| 500
| 5.0
| 10
| 50
| 50
| 5
! 500
| 50
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.2 | Click]]
|-
! barcstrip
| A
| 20
|
|
|
|
|
|
| 30
| 4 (3@15)
| 0
| 0
| 40
! 200
| 20
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/barcstrip | Click]]
|-
! nanobosch7
| A
| 20
| 2.5
| 10
| 50
| 0
| 0
| 500
| 5.0
| 10
| 40
| 60
| 5
| 350
| 30
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nanobosch7 | Click]]
|-
 
 
|-
!      <!-- recipe name -->
|      <!-- step -->
|      <!-- chiller temperature -->
|      <!-- dep time -->
|      <!-- dep pressure -->
|      <!-- dep C4F8 flow -->
|      <!-- dep SF6 flow -->
|      <!-- dep O2 flow -->
|      <!-- dep coil power -->
|      <!-- etch time -->
|      <!-- etch pressure -->
|      <!-- etch C4F8 flow -->
|      <!-- etch SF6 flow -->
|      <!-- etch O2 flow -->
!      <!-- etch coil power -->
|      <!-- etch platen power -->
| LF+B100      <!-- hardware -->
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.2 | Click]]
|-
|}
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