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{| border="2" cellspacing="1" cellpadding="3" align="center"
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/nanoetch click here]'''
<!--Checked for updates on 30/7-2018 - ok/jmli -->
<!--Checked for updates on 5/10-2020 - ok/jmli -->
<!--Checked for updates on 4/9-2025 - ok/jmli -->
== Development of continuous nanoetch ==
{{Template:Author-jmli1}}
<!--Checked for updates on 2/02-2023 - ok/jmli -->
 
The recipes below have been run on 2" wafers with 30/60/90/120/150 nm lines in zep resist. The wafers were crystalbonded to a 4" oxide carrier leaving only a very small fraction (much less than 1% ) of silicon to be etched. If you intend to etch most of the surface of the wafer to create very small posts or ridges (rather than holes or trenches)
 
The most used one is the nano1.42 recipe - to access the results, click on the bold link in the bottom of the table.
 
 
 
{| border="2" cellspacing="1" cellpadding="3" style="text-align:center;"
!Recipe
!Recipe
!nano1.0
!nano1.0
Line 8: Line 22:
!nano1.4
!nano1.4
!nano1.41
!nano1.41
!nano1.42
!nano1.43
|-
|-
!C<sub>4</sub>F<sub>8</sub> (sccm)
!C<sub>4</sub>F<sub>8</sub> (sccm)
Line 14: Line 30:
|52
|52
|52
|52
|75
|75
|75
|75
|75
|75
Line 19: Line 37:
|-
|-
!SF<sub>6</sub> (sccm)
!SF<sub>6</sub> (sccm)
|38
|38
|38
|38
|38
|38
Line 28: Line 48:
|-
|-
!O<sub>2</sub> (sccm)
!O<sub>2</sub> (sccm)
|0
|0
|0
|0
|0
|0
Line 37: Line 59:
|-
|-
! Coil power (W)
! Coil power (W)
|800 (forward)
|800 (F)
|600 (forward)
|600 (F)  
|800 (forward)
|800 (F)  
|600 (forward)
|600 (F)
|800 (forward)
|800 (F)
|800 (forward)
|800 (F)  
|800 (forward)
|800 (F)
|800 (F)
|800 (F)  
|-
|-
!Platen power (W)
!Platen power (W)
Line 53: Line 77:
|50
|50
|75
|75
|40
|30
|-
|-
! Pressure (mtorr)
! Pressure (mtorr)
|4
|4
|4
|4
|4
|4
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| -10
| -10
| -10
| -10
| -20
| -20
| -20
| -20
| -20
| -20
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|120
|120
|120
|120
|120
|120
|-
! colspan="10" align="center"| Etch rates (nm/min)
|-
| Averages||295||228||299||235||183||183||166||160||148
|-
|-
! Nominal line width
| Std. Dev||36||29||37||20||9||9||9||8||6
! colspan="7" align="center"| Etched depths (nm)
|-
|-
! 30 nm
! colspan="10" align="center"| Zep etch rate (nm/min)
|
|
|
|
|
|
|
|-
|-
!60 nm
| || ||172||95||94||69||67||101||65||55
|
|
|
|
|
|
|
|-
|-
!90 nm
! colspan="10" align="center"| Sidewall angle (degrees)
|
|
|
|
|
|
|
|-
|-
!120 nm
| Averages||93||94||92||94||91||91||90||90||90
|
|
|
|
|
|
|
|-
|-
!150 nm
| Std. Dev||1||1||0||1||0||0||1||0||0
|
|
|
|
|
|
|
|-
|-
! Nominal line width
! colspan="10" align="center"| CD loss (nm pr edge)
! colspan="7" align="center"| Etch rates in trenches (nm/min)
|-
|-
!30 nm
| Averages||-11||-13||-17||-10||-10||-10||-20||-13||-24
|
|
|
|
|
|
|
|-
|-
!60 nm
| Std. Dev||12||10||11||14||15||15||16||15||21
|
|
|
|
|
|
|
|-
|-
!90 nm
! colspan="10" align="center"| Bowing (nm)
|
|
|
|
|
|
|
|-
|-
!120 nm
| Averages||31||42||13||16||6||6||3||-3||0
|
|
|
|
|
|
|
|-
|-
!150 nm
| Std. Dev||7||6||4||3||2||2||2||3||1
|
|
|
|
|
|
|
|-
|-
|
! colspan="10" align="center"| Bottom curvature
! colspan="7" align="center"| Etch rates in zep resist (nm/min)
|-
|-
! One point on wafer
| Averages||-45||-45||-44||-43||-32||-32||-34||-32||-39
|
|-
|
| Std. Dev||5||7||4||9||10||10||9||8||9
|
|
|
|
|
|-
|-
! Images
! Images
Line 197: Line 155:
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141|Images]]
|'''[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142|Images]]'''
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano143|Images]]
|-
|-
|}
|}


*[[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP Metal Etch nanoetch]]


The nanoetch
 
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano|Etch of nanostructures in silicon on the ICP Metal Etcher]]
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2|Nanoetch contest: DRIE-Pegasus versus ASE (nano1.42 versus pxnano2)]]
 
== Development of switched nanoetch process ==
 
On the basis of the pxnano2 recipe from the ASE we will try to make a similar Bosch process on the Pegasus.
 
 
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''Process parameters'''
|-
! rowspan="2" width="100"| Recipe
! rowspan="2" width="20"| Step
! rowspan="2" width="20"| Temp.
! colspan="6" | Deposition step
! colspan="7" | Etch step
! colspan="2" | Process observations
|-
! width="40" | Time
! width="40" | Pressure
! width="40" | C<sub>4</sub>F<sub>8</sub>
! width="40" | SF<sub>6</sub>
! width="40" | O<sub>2</sub>
! width="40" | Coil
! width="40" | Time
! width="40" | [[Specific Process Knowledge/Etch/DRIE-Pegasus/Parameters| Pressure]]
! width="40" | C<sub>4</sub>F<sub>8</sub>
! width="40" | SF<sub>6</sub>
! width="40" | O<sub>2</sub>
! width="40" | Coil
! width="40" | Platen
! width="40" | [[Specific Process Knowledge/Etch/DRIE-Pegasus/Parameters| Hardware]]
! width="40" | Runs
|-
! nanobosch6
| A
| 20
| 2.5
| 10
| 50
| 0
| 0
| 500
| 5.0
| 10
| 40
| 60
| 5
| 350
| 30
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nanobosch6 | Click]]
|-
! nb-1.0
| A
| 20
| 2.5
| 10
| 50
| 0
| 0
| 500
| 5.0
| 10
| 50
| 50
| 5
| 350
| 30
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.0 | Click]]
|-
! nb-1.1
| A
| 20
| 2.5
| 10
| 50
| 0
| 0
| 500
| 5.0
| 10
| 50
| 50
| 5
| 350
! 50
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.1 | Click]]
|-
! nb-1.2
| A
| 20
| 2.5
| 10
| 50
| 0
| 0
| 500
| 5.0
| 10
| 50
| 50
| 5
! 500
| 50
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.2 | Click]]
|-
! barcstrip
| A
| 20
|
|
|
|
|
|
| 30
| 4 (3@15)
| 0
| 0
| 40
! 200
| 20
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/barcstrip | Click]]
|-
! nanobosch7
| A
| 20
| 2.5
| 10
| 50
| 0
| 0
| 500
| 5.0
| 10
| 40
| 60
| 5
| 350
| 30
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nanobosch7 | Click]]
|-
 
 
|-
!      <!-- recipe name -->
|      <!-- step -->
|      <!-- chiller temperature -->
|      <!-- dep time -->
|      <!-- dep pressure -->
|      <!-- dep C4F8 flow -->
|      <!-- dep SF6 flow -->
|      <!-- dep O2 flow -->
|      <!-- dep coil power -->
|      <!-- etch time -->
|      <!-- etch pressure -->
|      <!-- etch C4F8 flow -->
|      <!-- etch SF6 flow -->
|      <!-- etch O2 flow -->
!      <!-- etch coil power -->
|      <!-- etch platen power -->
| LF+B100      <!-- hardware -->
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.2 | Click]]
|-
|}
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