Specific Process Knowledge/Etch/DRIE-Pegasus/SOIetch: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@ | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/SOIetch click here]''' | ||
<!--Checked for updates on 14/5-2018 - ok/jmli --> | |||
<!--Checked for updates on 2/10-2020 - ok/jmli --> | |||
== SOI == | |||
{{Template:Author-jmli1}} | |||
<!--Checked for updates on 2/02-2023 - ok/jmli --> | |||
<!--Checked for updates on 4/9-2025 - ok/jmli --> | |||
== SOI etch == | {| border="1" cellpadding="1" cellspacing="0" style="text-align:center;" | ||
|- | |||
! rowspan="2" width="100"| Recipe | |||
! rowspan="2" width="20"| Name | |||
! rowspan="2" width="20"| Temp. | |||
! colspan="6" | Deposition step | |||
! colspan="7" | Etch step | |||
! colspan="3" | Comments | |||
|- | |||
! Time | |||
! Pres. | |||
! C<sub>4</sub>F<sub>8</sub> | |||
! SF<sub>6</sub> | |||
! O<sub>2</sub> | |||
! Coil | |||
! Time | |||
! Pres. | |||
! C<sub>4</sub>F<sub>8</sub> | |||
! SF<sub>6</sub> | |||
! O<sub>2</sub> | |||
! Coil | |||
! Platen | |||
! Showerhead | |||
! Runs | |||
! width="100" | Key words | |||
|- | |||
! rowspan="3" | SOI etch <!-- recipe name --> | |||
! SOI <!-- step --> | |||
| 20 <!-- chiller temp --> | |||
! 2 <!-- dep time --> | |||
| 25 <!-- dep pressure --> | |||
| 250 <!-- C4F8 flow --> | |||
| 0 <!-- SF6 flow --> | |||
| 0 <!-- O2 flow --> | |||
| 2000 <!-- coil power --> | |||
| 3 <!-- etch time --> | |||
| 30 <!-- etch pressure --> | |||
| 0 <!-- C4F8 flow --> | |||
| 400 <!-- SF6 flow --> | |||
| 40 <!-- O2 flow --> | |||
| 2800 <!-- coil power --> | |||
| 75 (0.025s, 75%) <!-- platen power --> | |||
! Old <!-- Showerhead --> | |||
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/SOI/SOI | 1]] <!-- link processes --> | |||
| <!-- keywords --> | |||
|- | |||
! SOI <!-- step --> | |||
| 20 <!-- chiller temp --> | |||
! 2 <!-- dep time --> | |||
| 25 <!-- dep pressure --> | |||
| 250 <!-- C4F8 flow --> | |||
| 0 <!-- SF6 flow --> | |||
| 0 <!-- O2 flow --> | |||
| 2000 <!-- coil power --> | |||
| 3 <!-- etch time --> | |||
| 30 <!-- etch pressure --> | |||
| 0 <!-- C4F8 flow --> | |||
| 400 <!-- SF6 flow --> | |||
| 40 <!-- O2 flow --> | |||
| 2800 <!-- coil power --> | |||
| 75 (0.025s, 75%) <!-- platen power --> | |||
! New <!-- Showerhead --> | |||
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/SOI/SOI | 1]] <!-- link processes --> | |||
| OK <!-- keywords --> | |||
|- | |||
|} | |||
== SOI etch acceptance test == | |||
The SOI etch uses the Low frequency (LF) platen generator to minimize the notching at buried stop layers such as the BOX layer in a SOI wafer. | The SOI etch uses the Low frequency (LF) platen generator to minimize the notching at buried stop layers such as the BOX layer in a SOI wafer. | ||