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In the acceptance test, we tested the vacuum performance, the ion source, and the uniformity of the deposited metal films. The test was made in March 2018 by Rebecca Ettlinger and Camilla Tingsager.
In the acceptance test, we tested the vacuum performance, the ion source, and the uniformity of the deposited metal films. The test was made in March 2018 by Rebecca Ettlinger and Camilla Tingsager.


The uniformity of the ion beam etch was tested on Si wafers with SiO<sub>2</sub> coating of a known thickness. It was measured by ellipsometry.
The uniformity of the ion beam etch was measured by ellipsometry in 5 points on Si wafers with SiO<sub>2</sub> coating of a known thickness.  
   
   
For metal films the thickness was measured with a stylus profiler and for Ti/Ni the sheet resistance uniformity was measured by Capres.  
For metal films the thickness was measured with a stylus profiler and for Ti/Ni the sheet resistance uniformity was measured by Capres A/S (now part of KLA).  


Side wall coverage was evaluated in SEM for Ti/Au films deposited at normal incidence (what most users require, which gives no side-wall deposition) and with various degrees of tilt.
Side wall coverage was evaluated in SEM for Ti/Au films deposited at normal incidence (what most users require, which gives no side-wall deposition) and with various degrees of tilt.
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== Ion source ==
== Ion source ==


We achieved an etch rate of up to 1 nm/min for SiO<sub>2</sub>. The etch rate is strongest in the center, about 15-20% higher than at the edges of a 6" wafer.
We achieved an etch rate of up to 1 nm/min for SiO<sub>2</sub> at the acceptance test in 2028. The etch rate was strongest in the center, about 15-20% higher than at the edges of a 6" wafer.


The reproducibility was quite good with less than 3% variation wafer-to-wafer within a batch and less than 10 % variation between two identical batches.
The reproducibility was quite good with less than 3% variation wafer-to-wafer within a batch and less than 10 % variation between two identical batches.
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