Specific Process Knowledge/Thin film deposition/Deposition of Tantalum: Difference between revisions

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-'''Feedback to this page''': '''[mailto:pvd@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tantalum&action=edit click here]'''
+'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tantalum&action=edit click here]'''
+<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
+=Tantalum (Ta)=
-Tantalum can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
+Tantalum (Ta) is a refractory metal prized for its extreme melting point, corrosion resistance, and biocompatibility, serving an array of semiconductor, optical, and engineering roles.
+Thin films are produced mainly by magnetron sputtering or e‑beam evaporation; process conditions determine whether low‑resistivity α‑Ta (stable body‑centered‑cubic) or high‑resistivity β‑Ta (metastable tetragonal) is obtained.
+In semiconductor fabrication, Ta acts as an adhesion liner and Cu diffusion barrier in interconnects, a robust gate or contact metal, and a hard mask, with α‑Ta preferred when minimal resistive loss is essential.
+Crucially, α‑Ta becomes superconducting below ≈4.5 K, making it valuable for superconducting nanowire detectors, qubit circuitry, and low‑loss microwave resonators. In contrast, the intrinsically stressed β-Ta phase is leveraged for thin-film precision resistors, microheaters, and radiation-hard sensors.
+Both phases benefit from Ta’s chemical inertness and x‑ray opacity, supporting x‑ray/EUV optics, MEMS springs, biomedical implants, and durable corrosion‑resistant coatings, underscoring Ta’s versatility when a stable, tunable metallic film is required.
+== Tantalum deposition ==
+Tantalum can be deposited by e-beam evaporation and sputter deposition. In the chart below you can compare the different deposition equipment.
+==Sputtering of Tantalum in Sputter-System Metal-Nitride(PC3)==
+*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tantalum/Sputtering of Ta in Sputter-System Metal-Nitride-PC3|Sputtering of Ta in Sputter-System Metal-Nitride(PC3)]]. (Recommended approach)
+==Sputtering of Tantalum in Sputter-System (Lesker)==
+*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tantalum/Sputtering of Ta|Sputtering of Ta in Sputter-System (Lesker)]].
+== E-beam evaporation of Tantalum ==
+Tantalum can be deposited by e-beam evaporation in our two Temescal tools.
+*[[/Ta Ebeam evaporation in Temescal |E-beam evaporation of Ta in Temescal]]
+<!---->
 {| border="1" cellspacing="0" cellpadding="4"
+|-style="background:silver; color:black"
 !
-! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
+! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
 ! Sputter ([[Specific_Process_Knowledge/Thin_film_deposition/Lesker|Lesker]])
-|-
+! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
-| Batch size
+|-
-|
+|-style="background:WhiteSmoke; color:black"
-*Up to 1x4" wafers
+! General description
-*smaller pieces
+| E-beam deposition of Ta
-|
+(line-of-sight deposition)
-*up to 1x6" wafer
+| Sputter deposition of Ta
+(not line-of-sight)
+| Sputter deposition of Ta
+(not line-of-sight)
+|-
 |-
-| Pre-clean
+|-style="background:LightGrey; color:black"
-|RF Ar clean
+! Pre-clean
+|Ar ion source (E-beam evaporator Temescal only)
+|none
 |RF Ar clean
 |-
-| Layer thickness
+|-style="background:WhiteSmoke; color:black"
-|10Å to 1µm
+! Layer thickness
-|10Å to
+|10Å to 0.2 µm*
+|10Å to 6000Å
+|10Å to 6000Å
 |-
-| Deposition rate
+|-style="background:LightGrey; color:black"
-|2Å/s to 15Å/s
+! Deposition rate
+|0.5Å/s to 1Å/s
 |~0.3Å/s
+|at least in the range 1 Å/s to 4 Å/s
 |-
+|-style="background:WhiteSmoke; color:black"
+! Batch size
+|
+*Up to 4x6" wafers
+*Up to 3x8" wafers (ask for holder)
+*Many smaller pieces
+|
+*Pieces or
+*1x4" wafer or
+*1x6" wafer
+|
+*Pieces or
+*10x4" wafer or
+*10x6" wafer
+|-
+|-style="background:LightGrey;  color:black"
+!Allowed materials
+|
+* Silicon
+*Silicon oxide
+*Silicon (oxy)nitride
+*Photoresist
+*PMMA
+*Mylar
+*Metals
+*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
+|
+* Silicon
+* Silicon oxide
+* Silicon nitride
+* Silicon (oxy)nitride
+* Photoresist
+* PMMA
+* Mylar
+* SU-8
+* Metals
+* Carbon
+|
+* Silicon
+* Silicon oxide
+* Silicon nitride
+* Silicon (oxy)nitride
+* Photoresist
+* PMMA
+* Mylar
+* SU-8
+* Metals
+* Carbon
+|-style="background:WhiteSmoke; color:black"
+! Comment
+| Tantalum deposition heats the chamber*
+Heating to 250 °C available in the 10-pocket e-beam evaporator.
+| 2-inch Ta target.
+| 3-inch Ta target.
+Heating available to 600 °C.
 |}
+'''*'''  ''The max thickness is limited to 200 nm as Ta deposition heats the chamber. If you wish to deposit more than that, it has to be done in several steps. The temperature on the back of a Si wafer rose to above 160 °C during deposition of 40 nm Ta even when using a cooling plate. If you wish to e-beam deposit Ta, please contact the [mailto:thinfilm@nanolab.dtu.dk Thin film group].''