Specific Process Knowledge/Thin film deposition/Deposition of Tantalum: Difference between revisions
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Tantalum can be deposited by e-beam evaporation and sputter deposition. In the chart below you can compare the different deposition equipment. | Tantalum can be deposited by e-beam evaporation and sputter deposition. In the chart below you can compare the different deposition equipment. | ||
==Sputtering of Tantalum in Sputter-System Metal-Nitride(PC3)== | ==Sputtering of Tantalum in Sputter-System Metal-Nitride(PC3)== | ||
*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tantalum/Sputtering of Ta in Sputter-System Metal-Nitride-PC3|Sputtering of Ta in Sputter-System Metal-Nitride(PC3)]]. (Recommended approach) | *[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tantalum/Sputtering of Ta in Sputter-System Metal-Nitride-PC3|Sputtering of Ta in Sputter-System Metal-Nitride(PC3)]]. (Recommended approach) | ||
==Sputtering of Tantalum in Sputter-System (Lesker)== | ==Sputtering of Tantalum in Sputter-System (Lesker)== | ||
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== E-beam evaporation of Tantalum == | == E-beam evaporation of Tantalum == | ||
Tantalum can be deposited by e-beam | Tantalum can be deposited by e-beam evaporation in our two Temescal tools. | ||
*[[/Ta Ebeam evaporation in Temescal |E-beam evaporation of Ta in Temescal]] | *[[/Ta Ebeam evaporation in Temescal |E-beam evaporation of Ta in Temescal]] | ||
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! Layer thickness | ! Layer thickness | ||
|10Å to 0.2 µm* | |10Å to 0.2 µm* | ||
|10Å to | |10Å to 6000Å | ||
|10Å to | |10Å to 6000Å | ||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Deposition rate | ! Deposition rate | ||
|0.5Å/s to | |0.5Å/s to 1Å/s | ||
|~0.3Å/s | |~0.3Å/s | ||
|at least in the range 1 Å/s to 4 Å/s | |at least in the range 1 Å/s to 4 Å/s | ||