Jump to content

Specific Process Knowledge/Thermal Process/Oxidation/Dry oxidation C1 furnace: Difference between revisions

← Older edit
VisualWikitext
Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,329 edits
Mmat (talk | contribs)
NLAB-Employees-701, NLAB-LabmanagerAllUsers, Administrators
1,954 edits
mNo edit summary
 
(3 intermediate revisions by 2 users not shown)
Line 1: Line 1:
 
=Dry Oxidation in the C1 furnace=
<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]
 
The C1 furnace can be used for dry oxidation of 4" and 6" wafers.  
The C1 furnace can be used for dry oxidation of 4" and 6" wafers.  


Line 9: Line 7:




===Dry Oxidation uniformity for 4" wafers===
==Dry Oxidation uniformity for 4" wafers==


A dry oxidation has been done with 30 4" wafers in the quartz boat in the furnace to get an idea of how uniform the oxide layer is from wafer to wafer over the boat.  
A dry oxidation has been done with 30 4" wafers in the quartz boat in the furnace to get an idea of how uniform the oxide layer is from wafer to wafer over the boat.  
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thermal_Process/Oxidation/Dry_oxidation_C1_furnace"