Specific Process Knowledge/Lithography/EBeamLithography/JBX9500Manual: Difference between revisions
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'''Feedback to this page''': '''[mailto:e-beam@ | '''Feedback to this page''': '''[mailto:e-beam@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography click here]''' | ||
= Purpose, location and technical specifications = | = Purpose, location and technical specifications = | ||
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The JEOL JBX-9500FS electron beam lithography system is a spot electron beam lithography system designed for use in writing patterns (10 nm - 1 µm) in electron sensitive resists. | The JEOL JBX-9500FS electron beam lithography system is a spot electron beam lithography system designed for use in writing patterns (10 nm - 1 µm) in electron sensitive resists. | ||
The JEOL JBX-9500FS was purchased in 2012 and is installed in E-1 and E-2 at DTU | The JEOL JBX-9500FS was purchased in 2012 and is installed in E-1 and E-2 at DTU Nanolabv. The main console of the e-beam writer is installed in E-2 which is a class 10 (ISO 4) cleanroom with tight temperature and moisture control. | ||
The computer controlling the e-beam (EWS/9500) and the computer supporting the conversion of e-beam files are located in E-1 which is a class 100 (ISO 5) cleanroom. | The computer controlling the e-beam (EWS/9500) and the computer supporting the conversion of e-beam files are located in E-1 which is a class 100 (ISO 5) cleanroom. | ||
== Authorization == | == Authorization == | ||
*Only authorized users are allowed to use this machine. You require at least 4 training sessions to be authorized. | *Only authorized users are allowed to use this machine. You require at least 4 training sessions to be authorized. | ||
*No unauthorized users are allowed into the e-beam room E-2 unless they are accompanied with a member of DTU | *No unauthorized users are allowed into the e-beam room E-2 unless they are accompanied with a member of DTU Nanolab staff. | ||
*In E-2, all users must keep within the area between the front side of the machine and the table with the pre-aligner setup. Only JEOL staff or DTU | *In E-2, all users must keep within the area between the front side of the machine and the table with the pre-aligner setup. Only JEOL staff or DTU Nanolab staff may access the backside of the machine. | ||
*No users, not even authorised users, are allowed to load a substrate into the autoloader (robot loader). | *No users, not even authorised users, are allowed to load a substrate into the autoloader (robot loader). | ||
*After your exposure, fully trained users can unload their cassettes from the autoloader | *After your exposure, fully trained users can unload their cassettes from the autoloader and unmount their substrates . | ||
*If you are prohibited to unmount your substrates before another user requires the cassette, you must accept that either the next user or DTU | *If you are prohibited to unmount your substrates before another user requires the cassette, you must accept that either the next user or DTU Nanolab personel unmount your substrates. | ||
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[[File:IMG_0186.jpg|600px|right]] | [[File:IMG_0186.jpg|600px|right]] | ||
For safety reasons, users are only authorized to unload cassettes from | For safety reasons, users are only authorized to unload cassettes from the autoloader. | ||
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*Choose measurement mode 'Semi Auto' | *Choose measurement mode 'Semi Auto' | ||
*enter the material size and slot number (e.g 4A) | *enter the material size and slot number (e.g 4A) | ||
*enter the material center offset (from the pre-alignment) and design (L-edit/Clewin) | *enter the material center offset (from the pre-alignment) and design coordinates (from L-edit/Clewin) of P mark and Q mark. | ||
*In P-mark rough/fine scan settings, adjust scan settings and enter the width of your marks. Also check the gain settings are ok. | *In P-mark rough/fine scan settings, adjust scan settings and enter the width of your marks. Also check the gain settings are ok. | ||
*Repeat point 4 for Q-mark rough/fine | *Repeat point 4 for Q-mark rough/fine | ||
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|[[File:SFOCUS.png|500px]] | |[[File:SFOCUS.png|500px]] | ||
|SFOCUS uses the bottom AE mark to measure the beam diameter while adjusting the objective lens. The objective lens is defined to be in focus where the machine finds the minimum beam diameter. This program can also be used to observe the depth of focus of a certain condition file. The graph shows the beam diameter versus position of objective lens. The position of the objective lens is converted to a difference in substrate height by executing the subprogram 'HCOEFFI'. <br><br> Please note, that SFOCUS does not work well for currents larger than 6 nA; at higher currents the focus should be set manually. This is to be done by DTU | |SFOCUS uses the bottom AE mark to measure the beam diameter while adjusting the objective lens. The objective lens is defined to be in focus where the machine finds the minimum beam diameter. This program can also be used to observe the depth of focus of a certain condition file. The graph shows the beam diameter versus position of objective lens. The position of the objective lens is converted to a difference in substrate height by executing the subprogram 'HCOEFFI'. <br><br> Please note, that SFOCUS does not work well for currents larger than 6 nA; at higher currents the focus should be set manually. This is to be done by DTU Nanolab staff only. | ||
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HEIMAP is a sub program that measures height of the substrate with an IR laser. The incidence angle of the laser is 73 degrees. | HEIMAP is a sub program that measures height of the substrate with an IR laser. The incidence angle of the laser is 73 degrees. | ||
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