Specific Process Knowledge/Lithography/EBeamLithography/JBX9500Manual: Difference between revisions

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-'''Feedback to this page''': '''[mailto:e-beam@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography click here]'''
+'''Feedback to this page''': '''[mailto:e-beam@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography click here]'''
 = Purpose, location and technical specifications =
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 The JEOL JBX-9500FS electron beam lithography system is a spot electron beam lithography system designed for use in writing patterns (10 nm - 1 µm) in electron sensitive resists.
-The JEOL JBX-9500FS was purchased in 2012 and is installed in E-1 and E-2 at DTU Danchip. The main console of the e-beam writer is installed in E-2 which is a class 10 (ISO 4) cleanroom with tight temperature and moisture control.
+The JEOL JBX-9500FS was purchased in 2012 and is installed in E-1 and E-2 at DTU Nanolabv. The main console of the e-beam writer is installed in E-2 which is a class 10 (ISO 4) cleanroom with tight temperature and moisture control.
 The computer controlling the e-beam (EWS/9500) and the computer supporting the conversion of e-beam files are located in E-1 which is a class 100 (ISO 5) cleanroom.
 == Authorization ==
 *Only authorized users are allowed to use this machine. You require at least 4 training sessions to be authorized.
-*No unauthorized users are allowed into the e-beam room E-2 unless they are accompanied with a member of DTU Danchip staff.
+*No unauthorized users are allowed into the e-beam room E-2 unless they are accompanied with a member of DTU Nanolab staff.
-*In E-2, all users must keep within the area between the front side of the machine and the table with the pre-aligner setup. Only JEOL staff or DTU Danchip staff may access the backside of the machine.
+*In E-2, all users must keep within the area between the front side of the machine and the table with the pre-aligner setup. Only JEOL staff or DTU Nanolab staff may access the backside of the machine.
 *No users, not even authorised users, are allowed to load a substrate into the autoloader (robot loader).
-*After your exposure, fully trained users can unload their cassettes from the autoloader, unmount their substrates and re-load an '''empty''' cassette into the autoloader.
+*After your exposure, fully trained users can unload their cassettes from the autoloader and unmount their substrates .
-*If you are prohibited to unmount your substrates before another user requires the cassette, you must accept that either the next user or DTU Danchip personel unmount your substrates.
+*If you are prohibited to unmount your substrates before another user requires the cassette, you must accept that either the next user or DTU Nanolab personel unmount your substrates.
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-'''7.''' In the jdf-file, the design coordinates of the P and Q marks should be defined. In the sdf-file the mark-detection should be set to semi-automatic 'S' (see section 7 in this manual and the separate sdf- and jdf-file preparation manual). In the sdf-file, enter the material center offset out put from PAMS.
+'''7.''' In the jdf-file, the design coordinates of the P and Q marks should be defined. In the sdf-file the mark-detection should be set to semi-automatic 'S'. In the sdf-file, enter the material center offset out put from PAMS.
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 [[File:IMG_0186.jpg|600px|right]]
-For safety reasons, users are only authorized to unload cassettes from the autoloader and to load empty cassettes into the autoloader.
+For safety reasons, users are only authorized to unload cassettes from the autoloader.
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 *Choose measurement mode 'Semi Auto'
 *enter the material size and slot number (e.g 4A)
-*enter the material center offset (from the pre-alignment) and L-edit coordinates of P mark and Q mark.
+*enter the material center offset (from the pre-alignment) and design coordinates (from L-edit/Clewin) of P mark and Q mark.
 *In P-mark rough/fine scan settings, adjust scan settings and enter the width of your marks. Also check the gain settings are ok.
 *Repeat point 4 for Q-mark rough/fine
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-== Subprogram that detcets chip marks: CHIPAL ==
+== Subprogram that detects chip marks: CHIPAL ==
 <span style="font-size: 90%; text-align: right;">[[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual#top|Go to top of this page]]</span>
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 If the program can not detect your chip marks, change the scan conditions ('RG mark detection condition') and try again.
+= Double current exposure =
+<span style="font-size: 90%; text-align: right;">[[Specific_Process_Knowledge/Lithography/EBeamLithography/FilePreparation#top|Go to top of this page]]</span>
+Before running a double-current exposure, you should receive training from a person from the e-beam staff. If this procedure is not performed correctly, it might end up in large pattern shifts.
+A double-current exposure requires calibration of 2 condition files, of which you should calibrate the large current first and the small current afterwards. If the two patterns are aligned to each other, one should make sure the two condition files scan the same drift mark. The procedure is as follows:
+# Load, restore and calibrate the condition file with the large current. When you scan the drift mark (using DRIFT), note the position of the drift mark (the position is written in the result display area of the calibration window).
+# Increase the scan width in DRIFT to 40 µm in both X and Y. Save and execute DRIFT again.
+# Save the condition file as usual.
+# Load, restore and calibrate the condition file with the smallest current. When you scan the drift mark, make sure it scans the same mark as on the former condition file, i.e. that the two positions are equal within a few µm. If they are not, call a person from the e-beam team for help.
+# Save the condition file as usual.
+When you start the exposure, you call the condition file with the small current first. When the condition file with the large current is called, the state of the machine is restored to the condition file by the command 'RESTOR 1' in the sdf-file:
+<pre>
+_____________________________________________________________
+MAGAZIN    'DOUBLE'
+#4
+%4A
+JDF     'smallcurrent',1
+ACC 100
+CALPRM '0.2na_ap5'
+DEFMODE 2
+RESIST 240
+SHOT A,8
+OFFSET(0,0)
+#4
+%4A
+JDF     'largecurrent',1
+ACC 100
+CALPRM '10na_ap6'
+DEFMODE 2
+RESTOR 1                         Coloumn is restored to 10na_ap6 and lenses are demagnetized
+RESIST 240
+SHOT A,18
+OFFSET(0,0)
+END 4
+______________________________________________________________
+</pre>
+Using the 'RESTOR' command without '1' the condition file will be restored without demagnetizing of the lenses.
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 |[[File:SFOCUS.png|500px]]
-|SFOCUS uses the bottom AE mark to measure the beam diameter while adjusting the objective lens. The objective lens is defined to be in focus where the machine finds the minimum beam diameter. This program can also be used to observe the depth of focus of a certain condition file. The graph shows the beam diameter versus position of objective lens. The position of the objective lens is converted to a difference in substrate height by executing the subprogram 'HCOEFFI'. <br><br> Please note, that SFOCUS does not work well for currents larger than 6 nA; at higher currents the focus should be set manually. This is to be done by DTU Danchip staff only.
+|SFOCUS uses the bottom AE mark to measure the beam diameter while adjusting the objective lens. The objective lens is defined to be in focus where the machine finds the minimum beam diameter. This program can also be used to observe the depth of focus of a certain condition file. The graph shows the beam diameter versus position of objective lens. The position of the objective lens is converted to a difference in substrate height by executing the subprogram 'HCOEFFI'. <br><br> Please note, that SFOCUS does not work well for currents larger than 6 nA; at higher currents the focus should be set manually. This is to be done by DTU Nanolab staff only.
 |}
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 HEIMAP is a sub program that measures height of the substrate with an IR laser. The incidence angle of the laser is 73 degrees.
-'''It has been observed by one user, that HEIMAP does not work on a SOI wafer coated with a thin layer of e-beam resist and ESPACER''', most liekly due to a Fabry-Perot effect in the substrate. The problem was solved by using thermally evaporated Al instead. The refractive index of Al (at 800 nm) is approximately 2, the refractive index of ESPACER approximately 1.25.
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