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'''Feedback to this page''': '''[mailto:e-beam@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography click here]'''
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= Purpose, location and technical specifications =
= Purpose, location and technical specifications =


==Type and location of machine==
The JEOL JBX-9500FS electron beam lithography system is a spot electron beam lithography system designed for use in writing patterns (10 nm - 1 µm) in electron sensitive resists.
The JEOL JBX-9500FS electron beam lithography system is a spot electron beam lithography system designed for use in writing patterns (10 nm - 1 µm) in electron sensitive resists.


The JEOL JBX-9500FS was purchased in 2012 and is installed in E-1 and E-2 at DTU Nanolabv. The main console of the e-beam writer is installed in E-2 which is a class 10 (ISO 4) cleanroom with tight temperature and moisture control.


Substrates coated with resists are mounted in a cassette and transferred into the e-beam writer via the robot loader (autoloader). Even fully trained users are only authorized to mount substrates into the e-beam cassettes but '''not''' authorized to load the cassettes into the autoloader.
The computer controlling the e-beam (EWS/9500) and the computer supporting the conversion of e-beam files are located in E-1 which is a class 100 (ISO 5) cleanroom.


After your exposure, fully trained users can unload their cassettes from the autoloader, unmount their substrates and re-load an '''empty''' cassette into the autoloader.
== Authorization ==


If you are prohibited to unmount your substrates before another user requires the cassette, you must accept that either the next user or DTU Danchip personel unmount your substrates.
*Only authorized users are allowed to use this machine. You require at least 4 training sessions to be authorized.
*No unauthorized users are allowed into the e-beam room E-2 unless they are accompanied with a member of DTU Nanolab staff.
*In E-2, all users must keep within the area between the front side of the machine and the table with the pre-aligner setup. Only JEOL staff or DTU Nanolab staff may access the backside of the machine.
*No users, not even authorised users, are allowed to load a substrate into the autoloader (robot loader).
*After your exposure, fully trained users can unload their cassettes from the autoloader and unmount their substrates .
*If you are prohibited to unmount your substrates before another user requires the cassette, you must accept that either the next user or DTU Nanolab personel unmount your substrates.


== Location ==
'''Any violation of the above rules will result in eviction from the cleanroom.'''
<span style="font-size: 90%; text-align: right;">[[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual#top|Go to top of this page]]</span>
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The e-beam writer is located in a class 10 (ISO 4) cleanroom with tight temperature and moisture control. The room must only be entered when the machines or equipment inside the room is intended to be used. Always wear face-mask and an extra pair of gloves when handling cassettes.
==Original JEOL Manual==


The computer controlling the e-beam (EWS/9500) is located in the controller room which is a class 100 cleanroom area. The computers supporting the conversion of the e-beam files are also located in the controller room.
The original JEOL manual for the e-beam writer JEOL JBX-9500FS is located on the O-drive: O:\CleanroomDrive\_Equipment\E-beam
Manuals
 
There are 3 manuals for the e-beam writer; apart from the main manual (this manual) there is a sdf and jdf-file manual, and a BEAMER manual. They can all 3 be accessed from LabAdviser or from LabManager under Technical documents.


 
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The original JEOL manual for the e-beam writer JEOL JBX-9500FS is located on the O-drive: O:\CleanroomDrive\_Equipment\E-beam
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Technical Specification.


== Techical Specification ==
== Techical Specification ==
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*The maximum field-size without stitching is 1000µm x 1000µm.
*The maximum field-size without stitching is 1000µm x 1000µm.
*The machine has cassettes that can contain either 6 wafers of 2” in size, 2 or 3 wafers of 4” in size, 1 wafer of 6” in size, 1 wafer of 8” in size, 4 chips of different sizes(slot sizes 4 mm, 8 mm, 12 mm, and 20 mm)
*The machine has cassettes that can contain either 6 wafers of 2” in size, 2 or 3 wafers of 4” in size, 1 wafer of 6” in size, 1 wafer of 8” in size, 4 chips of different sizes(slot sizes 4 mm, 8 mm, 12 mm, and 20 mm)
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[[File:colomn.png|400px]][[File:colomn2.png|400px]]
[[File:colomn.png|400px]][[File:colomn2.png|400px]]
 
== Rough estimation of exposure time ==
== Rough estimation of exposure time ==
<span style="font-size: 90%; text-align: right;">[[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual#top|Go to top of this page]]</span>
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{| cellpadding="2" style="border: 2px solid darkgray;" align="right"
{| cellpadding="2" style="border: 2px solid darkgray;" align="center"
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|- border="0"
|- border="0"
| [[File:IMG_0239.jpg|150px]] [[File:IMG_6675.jpg|150px]]
| [[File:Chip.jpg|190px]] [[File:IMG_6675.jpg|190px]]
|[[File:IMG_6440.jpg|150px]] [[File:IMG_6441.jpg|150px]]
|[[File:2inchTi.jpg|190px]] [[File:IMG_6441.jpg|190px]]
| [[File:IMG_6433.jpg|150px]]  [[File:IMG_6434.jpg|150px]]
| [[File:2inchAl.JPG|190px]]  [[File:IMG_6434.jpg|190px]]
| [[File:IMG_6436.jpg|150px]] [[File:IMG_6437.jpg|150px]]
| [[File:4inchTi.jpg|190px]] [[File:IMG_6437.jpg|190px]]
|[[File:IMG_6438.jpg|150px]]  [[File:IMG_6439.jpg|150px]]
|[[File:4inchAl.jpg|190px]]  [[File:IMG_6439.jpg|190px]]
|- align="center"
|- align="center"
| chip Al/Cu cassette and a close-up of slot 3B (12 mm) || 2" Ti cassette; wafer orientation is flat-down || 2" Al cassette; wafer orientation is flat-up || 4" Ti cassette; wafer orientation is flat-down || 4" Al cassette; wafer orientation is flat-down
| chip Al/Cu (position A - D) cassette and a close-up of slot 3B (12 mm) || 2" Ti cassette; position A - F; wafer orientation is flat-down || 2" Al cassette; position A - F; wafer orientation is flat-up || 4" Ti cassette; position A, B, and C; wafer orientation is flat-down || 4" Al cassette; position D, and E; wafer orientation is flat-down


|}
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[[File:HowToMount.jpg|right|500px]]


Wafer cassettes must be handled with great care and with an extra pair of clean gloves (to be found inside the e-beam room). Prevent any form of impact of the cassette and never touch the delicate parts of the cassette, i.e. the reference plane, reference marks or grounding pins. Take care that the cassette is not scratched against the metal table, always keep cleanroom side-sealed lintfree tissues between cassette and table.


General rules for handling cassettes and mounting wafers and chips into cassettes:
General rules for handling cassettes and mounting wafers and chips into cassettes:


*'''Always wear''' face-mask and a new pair of gloves
*'''Always wear''' face-mask and a new pair of gloves
*'''Never put cassettes directly on the table; use lint-free cleanroom tissues'''
*'''Never touch''' the reference planes, i.e. the six polished areas on the front side of the cassette
*'''Never touch''' the reference planes, i.e. the six polished areas on the front side of the cassette
*'''Never lift''' the cassette in the hook
*'''Never lift''' the cassette in the hook
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Seen from the front-side of the cassette with the hook to the right, the workpiece windows (wafer positions) are named A, B, C etc in reading-direction from top left to bottom right.


 
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[[File:CassetteMount.png|600px]]
 
[[File:CassetteMount2.png|600px]]


= Optical pre-alignment of wafers =
= Optical pre-alignment of wafers =
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[[File:prealign1.jpg|600px|right]]
[[File:prealign1.jpg|600px|right]]
[[File:prealign2..jpg|300px|right]]
'''1.''' Carefully position the cassette face down on the optical aligner stage; make sure that the cassette is completely aligned with the stage before clamping the cassette to the stage. The hook of the cassette should turn away from yourself, i.e. towards D-3.
'''2.''' Open the Pre-Alignment Microscope System (PAMS) tool and Kappa Image Base from the Desktop if not already open. In Kappa Image Base, click ‘Open/Close Control Dialog’ in ‘Camera’. Click on the screen-icon to open camera view and the ‘>>’-icon to open the control dialog. If no contact can be reached to the camera via Kappa Image Base, restart the computer.
'''3.''' Turn on the yellow light. Align the stage to the zero-marker, and press x and y on the sensor controller. This zeros the position of the software according to zero of the stage. Always zero the stage at maximum magnification.
'''4.''' In PAMS, choose JBX-9300FS and correct wafer size and position in the workpiece window. Enter the P and Q mark design positions (i.e. L-edit coordinates).


1. Carefully position the cassette face down on the optical aligner stage; make sure that the cassette is completely aligned with the stage before clamping the cassette to the stage. The hook of the cassette should turn away from yourself, i.e. towards the wall.
'''5.''' Find the P mark at maximum magnification. Click ‘Get P’. Repeat the procedure with the Q mark. Calculate gain and rotation by clicking 'Calculate' and log the results in the Log-window by clicking 'Log result'. Switch off the yellow light after use. Make sure that the rotation is < 0.5 degrees and Gain is close to 1. If this is not the case, you might have entered wrong design coordinates for P and Q or found the wrong marks on the chips or wafer.


2. Open the Pre-Alignment Microscope System (PAMS) tool and Kappa Image Base from the Desktop. In Kappa Image Base, click ‘Open/Close Control Dialog’ in ‘Camera’. Click on the screen-icon to open camera view and the ‘>>’-icon to open the control dialog. If no contact can be reached to the camera via Kappa Image Base, restart the computer (login: cleanroom, password: Renrum12).


3. Turn on the yellow light. Align the stage to the zero-marker, and press x and y on the sensor controller. This zeros the position of the software according to zero of the stage. Always zero the stage at maximum magnification.
'''6.''' Save the alignment information (File/Save). The file should be saved under your name and date, eg ‘mettekjan312012.txt’, in the folder ‘C:\Alignment data’. This file can be transferred to your office computer by citrix remote.




4. In PAMS, choose JBX-9300FS and correct wafer size and position in the workpiece window. Enter the P and Q mark design positions (i.e. L-edit coordinates).
'''7.''' In the jdf-file, the design coordinates of the P and Q marks should be defined. In the sdf-file the mark-detection should be set to semi-automatic 'S'. In the sdf-file, enter the material center offset out put from PAMS.




5. Find the P mark at maximum magnification. Click ‘Get P’. Repeat the procedure with the Q mark. Calculate gain and rotation by clicking 'Calculate' and log the results in the Log-window by clicking 'Log result'. Switch off the yellow light after use.
{| class = "collapsible collapsed" width=65% style = "border-radius: 10px; border: 1px solid #CE002D;"
! width=100% | ========= OUTPUT OF PAMS ALIGNMENT ON 4" WAFER IN SLOT A ============
|-
|
<pre>
PAMS Metrology Tool version 2.0.4b2


JBX-9300FS Wafer 4 inch A <>
Result Recorded 2015-10-29 16:24:01
              local            stage          (uncorrected)
Window    cc (    0,    0)  ( 90000, 55000)
Material  cc (    12,  -32)  ( 90012, 55032)


6. Save the alignment information (File/Save). The file should be saved under your name and date, eg ‘mettekjan312012.txt’, in the folder ‘C:\temp’. This file can be transferred to the e-beam computer DCH1352 by email or dropbox.
Global mark P:
  designed    (-17500,    0)  ( 72500, 55000)
  measured    (-17487,   -5)  ( 72513, 55005) ( 72714, 55242)


Global mark Q:
  designed    ( 17500,    0)  (107500, 55000)
  measured    ( 17553,  -60)  (107553, 55060)  (107775, 55293)


7. In the jdf-file, the theoretical (L-edit/CleWin) position of the P and Q marks should be defined. In the sdf-file the mark-detection should be set to semi-automatic 'S' (see section 7 in this manual and the separate sdf- and jdf-file preparation manual).
Gain 1.001144
Rotation 0.089933 degrees
 
OFFSET(    12,  -32) ;(Material center)
OFFSET(    13,   -5) ;(P mark)
end<> 
</pre>
 
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= Load and unload of cassettes into/from autoloader =
= Load and unload of cassettes into/from autoloader =
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[[File:IMG_0186.jpg|600px|right]]
[[File:IMG_0186.jpg|600px|right]]


For safety reasons, users are only authorized to unload cassettes from the autoloader and to load empty cassettes into the autoloader.  
For safety reasons, users are only authorized to unload cassettes from the autoloader.  




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#Close the door and click CLOSE
#Close the door and click CLOSE
#Set the autoloader back in REMOTE
#Set the autoloader back in REMOTE
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= Open EBX Menu (if not already open)=
[[File:ebxmenu.png|right|700px]]
On desktop one,
* Click on the arrow above 'CPU', and open a console
* In the console, type 'ebxmenu'
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= Transfer of cassettes between autoloader and e-beam writer =
= Transfer of cassettes between autoloader and e-beam writer =
<span style="font-size: 90%; text-align: right;">[[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual#top|Go to top of this page]]</span>
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[[File:ebxmenu.png|500px]]
[[File:LoaderControl2.jpg|right|500px]]
 


You can load the cassette into the e-beam writer from the loader control program (Ldr) from EBX Menu. This operation requires the autoloader to be in REMOTE.
You can load the cassette into the e-beam writer from the loader control program (Ldr) from EBX Menu. This operation requires the autoloader to be in REMOTE.
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If you by accident unload a cassette without evacuating the exchange-chamber, you must tick 'EXCH EVAC' and load your cassette onto stage and unload it to the autoloader again.
If you by accident unload a cassette without evacuating the exchange-chamber, you must tick 'EXCH EVAC' and load your cassette onto stage and unload it to the autoloader again.


[[File:LoaderControl2.jpg|500px]]
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= Calibration of condition file =
= Calibration of condition file =
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[[File:ebxmenu.png|400px]]
[[File:clb.png|left|600px]]
[[File:clb.png|500px]]


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From the EBX menu on workspace 1, open the calibration window ‘Clb’. From this window, a previously used condition file (calibration file) dedicated to a certain aperture setting and current setting is loaded, re-calibrated, and saved again.
From the EBX menu on workspace 1, open the calibration window ‘Clb’. From this window, a previously used condition file (calibration file) dedicated to a certain aperture setting and current setting is loaded, re-calibrated, and saved again.
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== Table of subprograms to execute during calibration ==
== Table of subprograms to execute during calibration ==
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== Detailed description on calibration procedure ==
== Detailed description on calibration procedure ==
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| [[File:Chip example.png|150px]]
| [[File:Chip example.png|150px]]
|- align="center"
|- align="center"
| Definition of length and width of global mark, use L = 500-1000 µm, W 3-5 µm || Text around mark is '''not''' recommended || Fabricate 2 or 3 P and Q marks. Place the P marks on the left side of the wafer and Q marks to the right. Do not place the marks closer than 15 mm to the edges of the wafer.|| Example of chip with 4 chip marks. Always position the chip marks outside the chip pattern. Position of chip marks are entered in jdf file using chip coordinate system, i.e. center of chip is (0,0).
| Definition of length and width of global mark, use L = 500-1000 µm, W 3-5 µm || Text around mark is '''not''' recommended || Fabricate 2 - 3 P and Q marks. Place the P marks on the left side of the wafer and Q marks to the right. Do not place the marks closer than 15 mm to the edges of the wafer.|| Example of chip with 4 chip marks. Always position the chip marks outside the chip pattern. Position of chip marks are entered in jdf file using chip coordinate system, i.e. center of chip is (0,0).
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*Choose measurement mode 'Semi Auto'
*Choose measurement mode 'Semi Auto'
*enter the material size and slot number (e.g 4A)
*enter the material size and slot number (e.g 4A)
*enter the material center offset (from the pre-alignment) and L-edit coordinates of P mark and Q mark.
*enter the material center offset (from the pre-alignment) and design coordinates (from L-edit/Clewin) of P mark and Q mark.
*In P-mark rough/fine scan settings, adjust scan settings and enter the width of your marks. Also check the gain settings are ok.
*In P-mark rough/fine scan settings, adjust scan settings and enter the width of your marks. Also check the gain settings are ok.
*Repeat point 4 for Q-mark rough/fine
*Repeat point 4 for Q-mark rough/fine
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== Subprogram that detcets chip marks: CHIPAL ==
== Subprogram that detects chip marks: CHIPAL ==
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If the program can not detect your chip marks, change the scan conditions ('RG mark detection condition') and try again.
If the program can not detect your chip marks, change the scan conditions ('RG mark detection condition') and try again.


= Double current exposure =
<span style="font-size: 90%; text-align: right;">[[Specific_Process_Knowledge/Lithography/EBeamLithography/FilePreparation#top|Go to top of this page]]</span>
Before running a double-current exposure, you should receive training from a person from the e-beam staff. If this procedure is not performed correctly, it might end up in large pattern shifts.
A double-current exposure requires calibration of 2 condition files, of which you should calibrate the large current first and the small current afterwards. If the two patterns are aligned to each other, one should make sure the two condition files scan the same drift mark. The procedure is as follows:
# Load, restore and calibrate the condition file with the large current. When you scan the drift mark (using DRIFT), note the position of the drift mark (the position is written in the result display area of the calibration window).
# Increase the scan width in DRIFT to 40 µm in both X and Y. Save and execute DRIFT again.
# Save the condition file as usual.
# Load, restore and calibrate the condition file with the smallest current. When you scan the drift mark, make sure it scans the same mark as on the former condition file, i.e. that the two positions are equal within a few µm. If they are not, call a person from the e-beam team for help.
# Save the condition file as usual.
When you start the exposure, you call the condition file with the small current first. When the condition file with the large current is called, the state of the machine is restored to the condition file by the command 'RESTOR 1' in the sdf-file:
<pre>
_____________________________________________________________
MAGAZIN    'DOUBLE'         
       
#4                                         
%4A                                     
JDF    'smallcurrent',1                             
ACC 100                                 
CALPRM '0.2na_ap5'                 
DEFMODE 2                           
RESIST 240                             
SHOT A,8                               
OFFSET(0,0)                         
#4                                         
%4A                                     
JDF    'largecurrent',1                             
ACC 100                                 
CALPRM '10na_ap6'
DEFMODE 2   
RESTOR 1                        Coloumn is restored to 10na_ap6 and lenses are demagnetized             
RESIST 240                             
SHOT A,18                               
OFFSET(0,0)
END 4                                     
______________________________________________________________
</pre>
Using the 'RESTOR' command without '1' the condition file will be restored without demagnetizing of the lenses.


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|- border="0"
|- border="0"
|[[File:SFOCUS.png|500px]]
|[[File:SFOCUS.png|500px]]
|SFOCUS uses the bottom AE mark to measure the beam diameter while adjusting the objective lens. The objective lens is defined to be in focus where the machine finds the minimum beam diameter. This program can also be used to observe the depth of focus of a certain condition file. The graph shows the beam diameter versus position of objective lens. The position of the objective lens is converted to a difference in substrate height by executing the subprogram 'HCOEFFI'. <br><br> Please note, that SFOCUS does not work well for currents larger than 6 nA; at higher currents the focus should be set manually. This is to be done by DTU Danchip staff only.
|SFOCUS uses the bottom AE mark to measure the beam diameter while adjusting the objective lens. The objective lens is defined to be in focus where the machine finds the minimum beam diameter. This program can also be used to observe the depth of focus of a certain condition file. The graph shows the beam diameter versus position of objective lens. The position of the objective lens is converted to a difference in substrate height by executing the subprogram 'HCOEFFI'. <br><br> Please note, that SFOCUS does not work well for currents larger than 6 nA; at higher currents the focus should be set manually. This is to be done by DTU Nanolab staff only.


|}
|}
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<span style="font-size: 90%; text-align: right;">[[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual#top|Go to top of this page]]</span>
<span style="font-size: 90%; text-align: right;">[[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual#top|Go to top of this page]]</span>


HEIMAP is a sub program that measures height of the substrate with an IR laser. The incidence angle of the laser is 73 degrees.


{| cellpadding="2" style="border: 2px solid darkgray;" align="right"
{| cellpadding="2" style="border: 2px solid darkgray;" align="right"
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''' Mask writing mode (first print) '''<br>
''' Mask writing mode (first print) '''<br>
With the path DRF5M, which is recommended for first print exposures (mask writing mode), HEIMAP is executed right before the machine starts the exposure and the machine will use the HEIMAP settings saved at this point.  
With the path DRF5M, which is recommended for first print exposures (mask writing mode), HEIMAP is executed right before the machine starts the exposure and the machine will use the HEIMAP settings saved at this point.  
It is important to measure height over an area that cover the entire pattern to be exposed. Also, make sure not measure height too close to the rim of the cassette (0.5-1 cm depending on cassette) or at substrate positions where the laser beam is deflected from holes or mesas.


The e-beam software can only save and use one pitch-setting, even if you expose two wafers/chips. Therefore, perform and save HEIMAP with the settings you wish to perform right before exposure.
The e-beam software can only save and use one pitch-setting, even if you expose two wafers/chips. Therefore, perform and save HEIMAP with the settings you wish to perform right before exposure.
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It is important to measure height over an area that cover the entire pattern to be exposed. Also, make sure not measure height too close to the rim of the cassette (0.5-1 cm depending on cassette) or at substrate positions where the laser beam is deflected from holes or mesas.