Jump to content

Specific Process Knowledge/Lithography/EBeamLithography/EBLLandingpage: Difference between revisions

← Older edit
VisualWikitext
Thope (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
2,178 edits
Thope (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
2,178 edits
 
Line 404: Line 404:


The process flow for a standard e-beam exposure on CSAR with Al on top can be found here [[media:Process Flow CSAR with Al.docx|Process Flow CSAR with Al]].
The process flow for a standard e-beam exposure on CSAR with Al on top can be found here [[media:Process Flow CSAR with Al.docx|Process Flow CSAR with Al]].
If your process can not utilize a aluminum discharge layer, Espacer might be another possibility to pursue. Espacer is a chemical that works as a discharging layer; it is spun onto the wafer on top of the resist and easily rinsed off the wafer after e-beam exposure. Visit this page for more information: [[Specific_Process_Knowledge/Lithography/Espacer|Espacer]]


= Literature on E-beam Lithography =
= Literature on E-beam Lithography =
* Lithography, Wiley, 2011: Chapter 3, Electron Beam Lithography by Stefan Landis: http://onlinelibrary.wiley.com/doi/10.1002/9781118557662.ch3/summary
* Lithography, Wiley, 2011: Chapter 3, Electron Beam Lithography by Stefan Landis: http://onlinelibrary.wiley.com/doi/10.1002/9781118557662.ch3/summary
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/EBeamLithography/EBLLandingpage"