Specific Process Knowledge/Lithography/EBeamLithography/EBLLandingpage: Difference between revisions
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DTU Nanolab has two EBL exposure systems, a JEOL JBX-9500FSZ and a Raith eLINE Plus system. The two systems are very different and new users should consult the EBL team to dertermine which system is appropriate for a particular project or type of sample. The general specifications of the two tools are given in the table below and may serve as a guideline for choice of system to use, especially the pros and cons list at the end of the table. | DTU Nanolab has two EBL exposure systems, a JEOL JBX-9500FSZ and a Raith eLINE Plus system. The two systems are very different and new users should consult the EBL team to dertermine which system is appropriate for a particular project or type of sample. The general specifications of the two tools are given in the table below and may serve as a guideline for choice of system to use, especially the pros and cons list at the end of the table. | ||
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|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u> | |See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u> | ||
|Anisole | |Anisole | ||
|ZED-N50/Hexyl Acetate,n-amyl acetate, oxylene. [[media:JJAP-51-06FC05.pdf|JJAP-51- | |ZED-N50/Hexyl Acetate,n-amyl acetate, oxylene. [[media:JJAP-51-06FC05.pdf|JJAP-51-06FC05]], [[media:JVB001037.pdf|JVB001037]] | ||
|IPA | |IPA | ||
|acetone/1165 | |acetone/1165 | ||
|[[media:Process_Flow_ZEP.docx| | |[[media:Process_Flow_ZEP.docx|Process Flow ZEP]] | ||
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|[http://www.allresist.com AllResist] | |[http://www.allresist.com AllResist] | ||
|Approved, not tested yet. Used for trilayer (PE-free) resist-stack or double-layer lift-off resist stack. Please contact [mailto:Lithography@nanolab.dtu.dk Lithography] for information. | |Approved, not tested yet. Used for trilayer (PE-free) resist-stack or double-layer lift-off resist stack. Please contact [mailto:Lithography@nanolab.dtu.dk Lithography] for information. | ||
|[[media:AR_P617.pdf|AR_P617 | |[[media:AR_P617.pdf|AR_P617]] | ||
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u> | |See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u> | ||
|PGME | |PGME | ||
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|acetone/1165 | |acetone/1165 | ||
|Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx| | |Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx|Process Flow]] | ||
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|[http://http://www.microresist.de/home_en.htm MicroResist] | |[http://http://www.microresist.de/home_en.htm MicroResist] | ||
|Standard negative resist | |Standard negative resist | ||
|[[media:mrEBL6000 Processing Guidelines.pdf|mrEBL6000 processing | |[[media:mrEBL6000 Processing Guidelines.pdf|mrEBL6000 processing Guidelines]] | ||
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u> | |See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u> | ||
|Anisole | |Anisole | ||
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|IPA | |IPA | ||
|mr REM | |mr REM | ||
|[[media:Process_Flow_mrEBL6000.docx| | |[[media:Process_Flow_mrEBL6000.docx|Process Flow]] | ||
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|[[media:Process Flow HSQ.docx|process flow HSQ]] | |[[media:Process Flow HSQ.docx|process flow HSQ]] | ||
[[/High resolution patterning with HSQ|High resolution patterning with HSQ]] | [[/Lithography/EBeamLithography/High resolution patterning with HSQ|High resolution patterning with HSQ]] | ||
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|[http://www.allresist.com AllResist] | |[http://www.allresist.com AllResist] | ||
|Both e-beam, DUV and UV-sensitive resist. Currently being tested, contact [mailto:pxshi@dtu.dk Peixiong Shi] for information. | |Both e-beam, DUV and UV-sensitive resist. Currently being tested, contact [mailto:pxshi@dtu.dk Peixiong Shi] for information. | ||
|[[media:AR-N7500-7520.pdf|AR-N7500-7520 | |[[media:AR-N7500-7520.pdf|AR-N7500-7520]] | ||
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u> | |See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u> | ||
|PGMEA | |PGMEA | ||
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|Positive | |Positive | ||
| [http://www.allresist.com AllResist] | | [http://www.allresist.com AllResist] | ||
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|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u> | |See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u> | ||
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|IPA | |IPA | ||
|acetone/1165 | |acetone/1165 | ||
|Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx| | |Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx|Process Flow]] | ||
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The process flow for a standard e-beam exposure on CSAR with Al on top can be found here [[media:Process Flow CSAR with Al.docx|Process Flow CSAR with Al]]. | The process flow for a standard e-beam exposure on CSAR with Al on top can be found here [[media:Process Flow CSAR with Al.docx|Process Flow CSAR with Al]]. | ||
= Literature on E-beam Lithography = | = Literature on E-beam Lithography = | ||
* Lithography, Wiley, 2011: Chapter 3, Electron Beam Lithography by Stefan Landis: http://onlinelibrary.wiley.com/doi/10.1002/9781118557662.ch3/summary | * Lithography, Wiley, 2011: Chapter 3, Electron Beam Lithography by Stefan Landis: http://onlinelibrary.wiley.com/doi/10.1002/9781118557662.ch3/summary | ||