Specific Process Knowledge/Thin film deposition/Deposition of Niobium Nitride: Difference between revisions
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=Niobium nitride (NbN)= | |||
Niobium nitride (NbN) is a refractory ceramic best known for its relatively high superconducting critical temperature (~16 K), high hardness, chemical stability, and good electrical conductivity. | |||
It is typically deposited by reactive magnetron sputtering to obtain dense, uniform films. | |||
In semiconductor technology, NbN serves as a robust diffusion barrier/contact, a gate‑level metal compatible with advanced CMOS flows, and—thanks to its superconductivity—a key material for superconducting digital circuits and Josephson‑junction‑based qubits. | |||
Optically and in quantum photonics, ultrathin NbN is the workhorse material for superconducting nanowire single-photon detectors (SNSPDs), kinetic-inductance detectors, and low-loss microwave resonators; its tunable plasma frequency also supports mid-IR plasmonic and terahertz metamaterial devices. | |||
Beyond electronics and optics, NbN’s hardness and oxidation resistance make it a high-performance wear, diffusion-barrier, and corrosion-protection coating for cutting tools, MEMS, and harsh-environment sensors. | |||
Altogether, NbN combines superconductivity, mechanical robustness, and versatile deposition options—cementing its role across superconducting electronics, photonics, and demanding engineering applications. | |||
== Deposition of Niobium Nitride == | == Deposition of Niobium Nitride == | ||
Deposition of ScN can only be done by reactive sputtering using | Deposition of ScN can only be done by reactive sputtering using Nb target. | ||
The | The primary tool for this application is the Cluster-Based, multi-chamber high-vacuum sputtering deposition system, commonly referred to as the 'Cluster Lesker.' The operating process is thoroughly documented and described in detail.: | ||
* [[Specific Process Knowledge/Thin film deposition/Deposition of Niobium Nitride/NbN Reactive Sputtering in Cluster Lesker PC3|Deposition of Niobium Nitride (NbN) using reactive p-DC sputtering]] in Sputter-System Metal-Nitride(PC3) Source 2 (3-inch target) | * [[Specific Process Knowledge/Thin film deposition/Deposition of Niobium Nitride/NbN Reactive Sputtering in Cluster Lesker PC3|Deposition of Niobium Nitride (NbN) using reactive p-DC sputtering]] in Sputter-System Metal-Nitride(PC3) Source 2 (3-inch target) | ||
At the moment (July 2025) we have a 3-inch Nb target (0.250" thick) for PC1 and PC3. | At the moment (July 2025) we have a 3-inch Nb target (0.250" thick) for PC1 and PC3. | ||