Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride: Difference between revisions

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-== Deposition of Aluminium Nitride ==
+=Aluminium Nitride (AlN)=
+Aluminum nitride (AlN) is a wide‑bandgap (~6.2 eV) ceramic that pairs very high thermal conductivity (> 200 W m<sup>-1</sup>K<sup>-1</sup> ), strong piezoelectric and acoustic properties, and a high dielectric breakdown field in a chemically inert, CMOS‑compatible matrix.
+It is deposited by reactive magnetron sputtering for dense, c-axis-oriented films widely used in RF devices, and by atomic layer deposition (ALD) when conformal, thickness-precise coatings are required on high-aspect-ratio or temperature-sensitive structures.
+In semiconductor technology, AlN acts as a nucleation or buffer layer for GaN power/high‑frequency devices, a robust passivation and diffusion barrier, and—when alloyed with Sc—to form ferroelectric AlScN for next‑generation non‑volatile FeFETs and piezoelectric MEMS actuators.
+Optically, its transparency from deep-UV to the IR and modest refractive index (~2.1) enable low-loss waveguides, UV LEDs/lasers, and protective or anti-reflective coatings that withstand high optical power and harsh environments.
+AlN’s strong piezoelectricity and high acoustic velocity underpin surface‑ and bulk‑acoustic‑wave filters, film bulk‑acoustic‑resonators, energy harvesters, and high‑Q MEMS resonators used in 5G RF front‑ends and timing devices.
+Beyond electronics and photonics, AlN substrates and thin films offer excellent thermal management for power modules, high-temperature, biocompatible passivation layers for sensors and implants, and mechanically robust coatings for corrosion and wear resistance, thereby cementing its role as a versatile thin-film material across semiconductor, optical, and engineering applications.
+= Deposition of Aluminium Nitride =
+AlN films can be deposited by reactive sputtering or by atomic layer deposition (ALD).
+In sputter systems, AlN can be deposited either by direct sputtering of an AlN target or by reactive sputtering with an Al target in a mixture of argon and nitrogen.
+==Atomic Layer Deposition of Aluminium Nitride (AlN)==
+Aluminium Nitride (AlN) can be deposited using the plasma-enhanced atomic layer deposition method from TMA and NH3 precursors. The process is well known, and the following link describes all the details:
+*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/AlN deposition using ALD2|AlN deposition using ALD2]]
-AlN films can be deposited by sputtering or by atomic layer deposition (ALD).
+==Reactive p-DC Sputtering of Aluminium Nitride (AlN)==
-In the sputter systems AlN can be either deposited by direct sputtering of an AlN target or reactive sputtering with an Al target in mixtures of argon and nitrogen.
+[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Cluster Lesker]] is the best option for deposition of AlN, especially the Sputter-System Metal-Nitride(PC3) chamber, which has no history of oxygen.  The process requires elevated temperatures and uses an Al substrate as a source. The films are highly textured. To improve quality, it is also possible to [[Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive Sputtering in Cluster Lesker PC3|dope the AlN with scandium]]. At DTU Nanolab, there is an option to perform co-sputtering of both [[Specific Process Knowledge/Thin film deposition/Deposition of Scandium/Sc Sputtering in Cluster Lesker PC3|Sc]] and [[Specific Process Knowledge/Thin film deposition/Deposition of Aluminium/Al Sputtering in Cluster Lesker PC3|Al]] at different powers to get ScAlN thin films.
 ==Comparison of the methods for deposition of AlN==
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 !Deposition rate
 |
-* Not tested
+* 0.055 nm/s (Power: 300W, pressure:1 mTorr, temp.: 400C, N2 ratio: 50%)
 |
 * at least 0.5 nm/s ([[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard recipe performance|see conditions]])
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-Further process information can be found here:
-*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/AlN deposition using ALD2|AlN deposition using ALD2]]
+*For further information on AlN deposition using the sputter systems, please contact the Thin Film Group ([mailto:thinfilm@nanolab.dtu.dk thinfilm@nanolab.dtu.dk]). The Sputter-System Metal-Nitride(PC3) was acquired partly to make it possible to deposit high-quality of AlN films.
-*[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process information|Deposition conditions and acceptance test results]] for sputter deposition of AlN in the Sputter-System Metal-Nitride(PC3).
-*For further information on AlN deposition using the sputter systems please contact the Thin Film Group ([mailto:thinfilm@nanolab.dtu.dk thinfilm@nanolab.dtu.dk]). The Sputter-System Metal-Nitride(PC3) was acquired partly to make it possible to deposit high-quality of AlN films.