Specific Process Knowledge/Thin film deposition/ALD Picosun R200/ALD multilayers: Difference between revisions
Appearance
| (55 intermediate revisions by 4 users not shown) | |||
| Line 1: | Line 1: | ||
{{cc-nanolab}} | |||
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/ALD_multilayers click here]''' | |||
<br> | |||
<br> | |||
This page describes non-standart recipes including multilayers structures. They were the first test recipes on the ALD-1 to test the tool functionality and can be used as inspiration. | |||
<br> | |||
<br> | |||
==Low temperature deposition of Al<sub>2</sub>O<sub>3</sub>== | ==Low temperature deposition of Al<sub>2</sub>O<sub>3</sub>== | ||
| Line 29: | Line 35: | ||
Deposition rate: <b>0.089 nm/cycle </b>(@120 <sup>o</sup>C) | Deposition rate: <b>0.089 nm/cycle </b>(@120 <sup>o</sup>C) | ||
This recipe has been developd for fabrication of high quality homogenious optical layers at low temperature. | This recipe has been developd for fabrication of high quality homogenious optical layers at low temperature. Research related results with this recipe can be found here: [http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.115.177402 LINK - requires login] (Phys. Rev. Lett. 115(17) 2015, 177402) | ||
| Line 84: | Line 90: | ||
|} | |} | ||
The uniformity, thickness, refractive index has been obtained using [[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer|Ellipsometer VASE]]. | |||
<gallery caption="" widths="400px" heights="350px" perrow="2"> | |||
image:Al2O3_LT_Thickness.JPG| Measured thickness distribution across 100 mm wafer. | |||
image:Al2O3_LT_RI.JPG| Measured refractive index distribution across 100 mm wafer. | |||
</gallery> | |||
<br clear="all" /> | |||
<b>Evgeniy Shkondin, DTU Nanolab, 2014-2016.</b> | |||
<br clear="all" /> | |||
<br clear="all" /> | |||
==Low temperature deposition of TiO<sub>2</sub>== | ==Low temperature deposition of TiO<sub>2</sub>== | ||
| Line 113: | Line 132: | ||
Deposition rate: <b>0.048 nm/cycle </b>(@ 120 <sup>o</sup>C) | Deposition rate: <b>0.048 nm/cycle </b>(@ 120 <sup>o</sup>C) | ||
This recipe has been developd for fabrication of high quality homogenious optical layers at low temperature. The deposited TiO<sub>2</sub> layers are amorphous. Research related results with this recipe can be found here: [http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.115.177402 LINK - requires longin] (Phys. Rev. Lett. 115(17) 2015, 177402) | |||
{| border="2" cellspacing="2" cellpadding="3" colspan="10" | |||
|bgcolor="#98FB98" |'''TiO<sub>2</sub> deposition at 120 <sup>o</sup>C''' | |||
|- | |||
| | |||
{| {{table}} | |||
| align="center" | | |||
{| border="2" cellspacing="2" cellpadding="3" align="center" style="width:750px" | |||
! colspan="5" |Deposition conditions at 120 <sup>o</sup>C for TiO2 LT recipe | |||
|- | |||
!Number of cycles | |||
|<b>Thickness (nm)</b> | |||
|<b>Uniformity across 100mm Si substrate (%)</b> | |||
|<b>Standard deviation error</b> | |||
|<b>Refractive index @ 632.8 nm</b> | |||
|- | |||
|250 | |||
|10.17 | |||
|2.19 | |||
|0.14 | |||
|2.18 | |||
|- | |||
|500 | |||
|23.12 | |||
|1.80 | |||
|0.23 | |||
|2.40 | |||
|- | |||
|750 | |||
|34.13 | |||
|1.87 | |||
|0.39 | |||
|2.39 | |||
|- | |||
|1000 | |||
|46.13 | |||
|1.78 | |||
|0.50 | |||
|2.39 | |||
|- | |||
|} | |||
|- | |||
|} | |||
|} | |||
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%% | |||
The uniformity, thickness, refractive index has been obtained using [[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer|Ellipsometer VASE]]. | |||
<gallery caption="" widths="400px" heights="350px" perrow="2"> | |||
image:TiO2_LT_Thickness.JPG| Measured thickness distribution across 100 mm wafer. | |||
image:TiO2_LT_RI.JPG| Measured refractive index distribution across 100 mm wafer. | |||
</gallery> | |||
<br clear="all" /> | |||
<b>Evgeniy Shkondin, DTU Nanolab, 2014-2016.</b> | |||
<br clear="all" /> | |||
<br clear="all" /> | |||
==Low temperature grown multilayers on flat surfaces== | ==Low temperature grown multilayers on flat surfaces== | ||
Recipe: EMA01 | <b>Recipe: EMA01</b> | ||
<b>Recipe: EMA02</b> | |||
<b>Recipe: EMA03</b> | |||
<b>Recipe: EMA04</b> | |||
<b>Temperature: 120 <sup>o</sup>C</b> | |||
All four recipes is based on <b>Al2O3_LT</b> amd <b>TiO2_LT</b> above mentioned low temperature recipes. Optical research based on fabricated Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> multilayers has been published [http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.115.177402 LINK] (Phys. Rev. Lett. 115(17) 2015, 177402) | |||
<gallery caption="" widths="1000px" heights="700px" perrow="1"> | |||
image:multilayers222.jpg| Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub> multilayers. | |||
</gallery> | |||
<br clear="all" /> | |||
<b>Evgeniy Shkondin, DTU Nanolab (former DTU Danchip), 2014-2016.</b> | |||
<br clear="all" /> | |||
<br clear="all" /> | |||
===Investigation of chemical composition in multilayers system=== | |||
Chemical tace analysis has been performed using [[Specific_Process_Knowledge/Characterization/XPS/K-Alpha|XPS K-Alpha]] equipment in depth profile mode. | |||
<gallery caption="" widths="1000px" heights="1000px" perrow="1"> | |||
image:XPS_depth_multi_survey.JPG| Survey scan. | |||
</gallery> | |||
<br clear="all" /> | |||
<gallery caption="" widths="400px" heights="350px" perrow="2"> | |||
image:XPS_depth_Al_10_AL.jpg| Al 2p signal multilayers. | |||
image:XPS_depth_Al_10_Ti.jpg| Ti 2p signal multilayers. | |||
image:XPS_depth_Al_10_O.jpg| O 1s signal multilayers. | |||
image:XPS_depth_Al_10_Si.jpg| Si 2p signal multilayers. | |||
</gallery> | |||
<br clear="all" /> | |||
<b>Evgeniy Shkondin, DTU Nanolab (former DTU Danchip), 2014-2016.</b> | |||
<br clear="all" /> | |||
<br clear="all" /> | |||
==Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub> multilayers on high aspect ratio structures== | ==Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub> multilayers on high aspect ratio structures== | ||
| Line 133: | Line 257: | ||
<gallery caption="" widths=" | <gallery caption="" widths="1000px" heights="1000px" perrow="1"> | ||
image:Evgeniy Shkondin Si trenches coverd with Al2O3 and TiO2 multilayers using ALD.JPG| Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub> multilayers grown on silicon trenches. | image:Evgeniy Shkondin Si trenches coverd with Al2O3 and TiO2 multilayers using ALD.JPG| Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub> multilayers grown on silicon trenches. | ||
| Line 140: | Line 264: | ||
<br clear="all" /> | <br clear="all" /> | ||
<b>Evgeniy Shkondin, DTU Danchip, 2014-2016.</b> | <b>Evgeniy Shkondin, DTU Nanolab (former DTU Danchip), 2014-2016.</b> | ||
<br clear="all" /> | <br clear="all" /> | ||
<br clear="all" /> | <br clear="all" /> | ||