Specific Process Knowledge/Thin film deposition/Deposition of Hafnium Oxide: Difference between revisions
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=Hafnium oxide (HfO₂)= | =Hafnium oxide (HfO₂)= | ||
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Overall, HfO₂ combines precise process control (especially via ALD), mechanical and thermal robustness, and a tunable electric-field response, making it a cornerstone material for thin films across semiconductor, photonic, and engineering applications. | Overall, HfO₂ combines precise process control (especially via ALD), mechanical and thermal robustness, and a tunable electric-field response, making it a cornerstone material for thin films across semiconductor, photonic, and engineering applications. | ||
== Deposition of Hafnium Oxide == | == ALD Deposition of Hafnium Oxide == | ||
Thin films of hafnium oxide, HfO<sub>2</sub>, can be deposited both in the [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD1]] and the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2 (PEALD)]]. However, it is preferred to use the ALD1. | Thin films of hafnium oxide, HfO<sub>2</sub>, can be deposited both in the [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD1]] and the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2 (PEALD)]]. However, it is preferred to use the ALD1. | ||
More information about hafnium oxide deposition can be found here: | More information about hafnium oxide deposition can be found here: | ||
*[[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/HfO2_deposition_using_ALD_new_page|ALD deposition of HfO<sub>2</sub> in ALD1]] | |||
*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/HfO2 deposition using ALD2|ALD deposition of HfO<sub>2</sub> in ALD2]]. | |||
==Deposition of hafnium oxide== | ==Deposition of hafnium oxide== | ||