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=Hafnium oxide (HfO₂)=
=Hafnium oxide (HfO₂)=


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In semiconductors, it is the standard high‑κ gate dielectric in high‑κ/metal‑gate stacks, a capacitor dielectric in DRAM, a robust passivation/barrier layer, and the active switching medium in resistive RAM; doped or strain‑stabilized HfO₂ (e.g., with Zr, Si, Al) also exhibits ferroelectric/antiferroelectric phases, enabling FeFET non‑volatile memories and ferroelectric capacitors.
In semiconductors, it is the standard high‑κ gate dielectric in high‑κ/metal‑gate stacks, a capacitor dielectric in DRAM, a robust passivation/barrier layer, and the active switching medium in resistive RAM; doped or strain‑stabilized HfO₂ (e.g., with Zr, Si, Al) also exhibits ferroelectric/antiferroelectric phases, enabling FeFET non‑volatile memories and ferroelectric capacitors.
Optically, HfO₂ offers a high refractive index with low absorption from the UV through the NIR and a high laser-damage threshold, supporting durable anti-reflective/high-reflective multilayers, mirrors, protective windows, and waveguide or cavity coatings.
Optically, HfO₂ offers a high refractive index with low absorption from the UV through the NIR and a high laser-damage threshold, supporting durable anti-reflective/high-reflective multilayers, mirrors, protective windows, and waveguide or cavity coatings.
Beyond electronics and optics, its hardness, corrosion resistance, and radiation tolerance make it a worthwhile material for MEMS passivation, diffusion barriers, biocompatible protective layers, and harsh-environment coatings.
Beyond electronics and optics, its hardness, corrosion resistance, and radiation tolerance make it a suitable material for MEMS passivation, diffusion barriers, biocompatible protective layers, and coatings in harsh environments.
Overall, HfO₂ combines precise process control (especially via ALD), mechanical and thermal robustness, and a tunable electric-field response, making it a cornerstone thin-film material across semiconductor, photonic, and engineering applications.
Overall, HfO₂ combines precise process control (especially via ALD), mechanical and thermal robustness, and a tunable electric-field response, making it a cornerstone material for thin films across semiconductor, photonic, and engineering applications.
 
== ALD Deposition of Hafnium Oxide ==
Thin films of hafnium oxide, HfO<sub>2</sub>, can be deposited both in the [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD1]] and the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2 (PEALD)]]. However, it is preferred to use the ALD1.
 
More information about hafnium oxide deposition can be found here:


== Deposition of Hafnium Oxide ==
*[[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/HfO2_deposition_using_ALD_new_page|ALD deposition of HfO<sub>2</sub> in ALD1]]  
Thin films of hafnium oxide, HfO<sub>2</sub>, can be deposited both in the [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD1]] and the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2 (PEALD)]]. However, it is preferred to use the ALD1, as the ALD2 is mainly dedicated to nitride deposition.


More information about hafnium oxide deposition can be found here: for [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/HfO2_deposition_using_ALD_new_page|ALD1]] and for [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/HfO2 deposition using ALD2|ALD2 (PEALD)]].
*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/HfO2 deposition using ALD2|ALD deposition of HfO<sub>2</sub> in ALD2]].


==Deposition of hafnium oxide==
==Deposition of hafnium oxide==
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