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=Hafnium oxide (HfO₂)=


== Deposition of Hafnium Oxide ==
Hafnium oxide (HfO₂) is a wide‑bandgap, high‑κ dielectric (κ ≈ 20–25) valued for its large breakdown field, thermal/chemical stability, and excellent CMOS compatibility.
Thin films of hafnium oxide, HfO<sub>2</sub>, can both be deposited both in the [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD1]] and the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2 (PEALD)]]. However, it the preferred to use the ALD1, as the ALD2 is mainly dedicated for nitride deposition.
It is deposited by magnetron sputtering for dense optical and protective coatings, and by atomic layer deposition (ALD) when ultra-thin, conformal, and thickness-precise films are required on high-aspect-ratio structures, such as FinFETs, 3D NAND, and trench capacitors.
In semiconductors, it is the standard high‑κ gate dielectric in high‑κ/metal‑gate stacks, a capacitor dielectric in DRAM, a robust passivation/barrier layer, and the active switching medium in resistive RAM; doped or strain‑stabilized HfO₂ (e.g., with Zr, Si, Al) also exhibits ferroelectric/antiferroelectric phases, enabling FeFET non‑volatile memories and ferroelectric capacitors.
Optically, HfO₂ offers a high refractive index with low absorption from the UV through the NIR and a high laser-damage threshold, supporting durable anti-reflective/high-reflective multilayers, mirrors, protective windows, and waveguide or cavity coatings.
Beyond electronics and optics, its hardness, corrosion resistance, and radiation tolerance make it a suitable material for MEMS passivation, diffusion barriers, biocompatible protective layers, and coatings in harsh environments.
Overall, HfO₂ combines precise process control (especially via ALD), mechanical and thermal robustness, and a tunable electric-field response, making it a cornerstone material for thin films across semiconductor, photonic, and engineering applications.


More information about hafnium oxide deposition can be found here: for [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/HfO2 deposition using ALD|ALD1]] and for [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/HfO2 deposition using ALD2|ALD2 (PEALD)]].
== ALD Deposition of Hafnium Oxide ==
Thin films of hafnium oxide, HfO<sub>2</sub>, can be deposited both in the [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD1]] and the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2 (PEALD)]]. However, it is preferred to use the ALD1.


==Only method at the moment for the deposition of hafnium oxide==
More information about hafnium oxide deposition can be found here:
 
*[[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/HfO2_deposition_using_ALD_new_page|ALD deposition of HfO<sub>2</sub> in ALD1]]
 
*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/HfO2 deposition using ALD2|ALD deposition of HfO<sub>2</sub> in ALD2]].
 
==Deposition of hafnium oxide==


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![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD1]]
![[Specific Process Knowledge/Thin film deposition/ALD Picosun R200|ALD]]
![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2 (PEALD)]].
|-
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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*Atomic Layer Deposition
*Atomic Layer Deposition
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*(Plasma enhanced) Atomic Layer Deposition
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Stoichiometry
!Stoichiometry
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*HfO2
*HfO<sub>2</sub>
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*HfO<sub>2</sub>
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Film Thickness
!Film Thickness
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* 0 nm - 50 nm  
*0 nm - 100 nm
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*0 nm - 50 nm
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Deposition rate
!Deposition rate
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* 0.0827 nm/cycle on a flat sample
* At 150 <sup>o</sup>C: 0.11 nm/cycle
* 0.954-0.122 nm/cycle on a high aspect ratio structures
* At 250 <sup>o</sup>C: 0.0827 nm/cycle
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* At 250 <sup>o</sup>C: 0.0804 nm/cycle
* At 250 <sup>o</sup>C on trenches: 0.954-1.22 nm/cycle
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Step coverage
!Step coverage
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*Very good.
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*Very good
*Very good
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|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Process Temperature
!Temperature window
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*150 <sup>o</sup>C - 300 <sup>o</sup>C
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* 150 - 300<sup>o</sup>C
*150 <sup>o</sup>C - 300 <sup>o</sup>C
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|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Substrate size
!Substrate size
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*Several small samples
*1-5 100 mm wafers (only good uniformity for the top wafer)
*1-5 50 mm wafers
*1-5 150 mm wafer (only good uniformity for the top wafer)
*1-5 100 mm wafers
*1 200 mm wafer
*1-5 150 mm wafer
*Several smaller samples
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*1 100 mm wafer
*1 150 mm wafer
*1 200 mm wafer
*Several smaller samples
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|-
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|-style="background:WhiteSmoke; color:black"
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*Silicon oxide, silicon nitride
*Silicon oxide, silicon nitride
*Quartz/fused silica  
*Quartz/fused silica  
*Al, Al<sub>2</sub>O<sub>3</sub>
*Metals (use dedicated carrier wafer)
*Ti, TiO<sub>2</sub>
*III-V materials (use dedicated carrier wafer)
*Other metals (use dedicated carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
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*Silicon
*Silicon oxide, silicon nitride
*Quartz/fused silica
*Metals (use dedicated carrier wafer)
*III-V materials (use dedicated carrier wafer)
*III-V materials (use dedicated carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
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