Specific Process Knowledge/Thin film deposition/Deposition of ITO: Difference between revisions
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=Indium tin oxide (ITO)= | |||
Indium tin oxide (ITO) is the canonical degenerate n‑type transparent conducting oxide, combining high visible transmittance with low sheet resistance and a mature, scalable manufacturing base. | |||
It is deposited industrially by magnetron sputtering for uniform, low-resistivity films. ITO is the workhorse transparent electrode for displays and touch panels, OLED/LED emitters, and a wide range of photovoltaic technologies; oxygen stoichiometry is tuned to balance conductivity and transparency. | |||
In photonics, heavily doped ITO exhibits an epsilon-near-zero response in the near-infrared (around the 1.55 µm telecom band), enabling compact electro-optic modulators, plasmonic waveguides, and absorbers, as well as strong nonlinear/ultrafast effects. | |||
ITO can also become superconducting at cryogenic temperatures when strongly reduced or ion-intercalated, with reported critical temperatures ranging from sub-kelvin to a few kelvin, depending on the carrier density and processing. | |||
Beyond semiconductors and optics, ITO supports transparent heaters, low-emissivity and EMI-shielding window coatings, and ENZ-enabled NIR photodetectors. When even lower resistance is required, it is often paired with ultrathin metals in hybrid stacks, while retaining high transparency. | |||
==Deposition of ITO== | ==Deposition of ITO== | ||
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We have acquired a lot of knowledge about ITO deposition in our Cluster Lesker system, and results are summarized on a page here: | We have acquired a lot of knowledge about ITO deposition in our Cluster Lesker system, and results are summarized on a page here: | ||
*[[Specific_Process_Knowledge/Thin_film_deposition/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)|Sputtering of ITO in Sputter-System Metal-Oxide (PC1)]]. | *[[Specific_Process_Knowledge/Thin_film_deposition/Deposition of ITO/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)|Sputtering of ITO in Sputter-System Metal-Oxide (PC1)]]. | ||
==Comparison of the methods for deposition of ITO== | ==Comparison of the methods for deposition of ITO== | ||
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*Not known | *Not known | ||
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*In:Sn:O ~ 39:3:58. Can be tuned by altering [[Specific_Process_Knowledge/Thin_film_deposition/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)|deposition conditions]]. | *In:Sn:O ~ 39:3:58. Can be tuned by altering [[Specific_Process_Knowledge/Thin_film_deposition/Deposition of ITO/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)#Stoichiometry|deposition conditions]]. | ||
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* 0.5-2 nm/min | * 0.5-2 nm/min | ||
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* at least up to ~ 10 nm/min ([[Specific_Process_Knowledge/Thin_film_deposition/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)|see conditions]]) | * at least up to ~ 10 nm/min ([[Specific_Process_Knowledge/Thin_film_deposition/Deposition of ITO/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)#Deposition_rate|see conditions]]) | ||
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