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== Deposition of Titanium nitride ==
=Titanium Nitride=


Thin films of titanium nitride can be deposited by [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD]] and [[Specific Process Knowledge/Thin film deposition/Lesker|sputtering]] methods.  
Titanium nitride (TiN) is a refractory, conductive ceramic that pairs excellent thermal/chemical stability with high hardness, making it a robust, CMOS‑compatible metal for microelectronics and harsh‑environment devices.
It can be deposited by reactive magnetron sputtering for dense, low‑resistivity films and by atomic layer deposition (ALD) for ultra‑conformal, thickness‑controlled coatings in high‑aspect‑ratio interconnects and 3D nanostructures.
In semiconductor processing, TiN serves as a copper diffusion barrier, gate/electrode material with tunable work function, hard mask/ARC, and stable contact in ferroelectric, memristive, and power devices.
Optically, TiN behaves as a plasmonic metal with a tunable epsilon‑near‑zero region in the visible–near‑IR, enabling durable metasurfaces, waveguides, absorbers, and thermoplasmonic/heater structures that tolerate high temperatures better than noble metals.
TiN is also a superconductor at cryogenic temperatures (critical temperatures typically around a few kelvin), supporting resonators, kinetic‑inductance detectors, nanowire single‑photon detectors, and low‑loss microwave circuits.
Beyond semiconductors and photonics, TiN’s hardness, wear and corrosion resistance, and biocompatibility underpin tool coatings, tribological layers, and medical implant finishes, while its stability and moderate resistivity suit transparent‑window heaters when patterned or combined in hybrid stacks.


Information about the ALD process can be found [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/TiN deposition using ALD2|here]].


Information about the sputtering process can be found [[Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride/Deposition of Titanium Nitride using Lesker sputter tool|here]].
== Deposition of Titanium Nitride ==
 
Thin films of Titanium Nitride (TiN) can be deposited by either [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD]] or reactive sputtering. If sputtering is used, the target is titanium (Ti), and nitrogen (N<sub>2</sub>) is added as a reactive gas to the chamber, resulting in the formation of Titanium Nitride on the sample. The process information is available below:
 
*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/TiN deposition using ALD2|TiN deposition using ALD]].
 
*[[Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride/Deposition of Titanium Nitride using Lesker sputter tool|TiN deposition with reactive sputtering using Lesker sputter tool]].
 
*[[Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride/Deposition of Titanium Nitride using Sputter-System Metal-Oxide (PC1)|TiN deposition with reactive sputtering using Sputter-System Metal-Oxide (PC1)]].
 
*[[Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride/Deposition of Titanium Nitride using Sputter-System Metal-Nitride (PC3)|TiN deposition with reactive sputtering using Sputter-System Metal-Nitride (PC3)]] - preferable option.


==Comparison between sputtering and ALD methods for deposition of Titanium Nitride.==
==Comparison between sputtering and ALD methods for deposition of Titanium Nitride.==
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![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]
![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-System Metal-Oxide (PC1)/Sputter-System Metal-Nitride (PC3)]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]]
|-
|-


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*Atomic Layer Deposition
*Atomic Layer Deposition
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*Sputtering
*Reactive sputtering
*Pulsed DC reactive sputtering
*Reactive HIPIMS (high-power impulse magnetron sputtering)
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*Reactive sputtering
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|-


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*TiN
*TiN
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*TiN (can be tuned)
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*TiN (can be tuned)
*TiN (can be tuned)
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!Film Thickness
!Film Thickness
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* 0nm - 50nm
* 0 nm - 50 nm
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* 0nm - 200nm
* few nm - ? (hundreds of nm)
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* few nm - 200 nm
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|-


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* 0.0173 nm/cycle on a flat sample
* 0.0173 nm/cycle on a flat sample
* 0.0232 nm/cycle on a high aspect ratio structures
* 0.0232 nm/cycle on a high aspect ratio structures
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* about 0.12 nm/s, depends on sputtering parameters, check processlog in LabManager
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* up to 0.0625 nm/s on a flat sample
* up to 0.0625 nm/s on a flat sample
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*Very good
*Very good
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*not known yet
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*Not investigated
*Not investigated
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!Process Temperature
!Process Temperature
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* 450<sup>o</sup>C
* 450 °C
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* 400<sup>o</sup>C
* Up to 600 °C
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* Up to 400 °C
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*1-5 100 mm wafers
*1-5 100 mm wafers
*1-5 150 mm wafer
*1-5 150 mm wafer
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*Many small samples
*Up to 10x100 mm or 150 mm wafers
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*Several small samples
*Several small samples
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
!Allowed materials
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*Silicon  
*Silicon  
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*Metals  
*Metals  
*III-V materials (use dedicated carrier wafer)
*III-V materials (use dedicated carrier wafer)
*Almost anything that is not toxic.
*Almost anything that is not toxic and does not outgas
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*Silicon
*Silicon oxide, silicon nitride
*Quartz/fused silica
*Metals
*III-V materials (use dedicated carrier wafer)
*Almost anything that is not toxic
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|-
|}
|}
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