Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Silicon Nitride Etch: Difference between revisions
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====Etch rate & uniformity==== | |||
'''Recipe: ''Slowetch 2''''' | |||
'''SRN (LPCVD) etch uniformity on 6″ wafer''' | |||
'''SRN (LPCVD) etch uniformity on 6″ wafer | |||
[[File:slowetch2_100% loadSRN.png|400px|left|thumb|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)]] | [[File:slowetch2_100% loadSRN.png|400px|left|thumb|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)]] | ||
[[File:slowetch2_100% loadSRN_etchrate.png|400px|left|thumb|Note: etch rate for SRN with Slowetch 2. The wafers were processed on 4 different days, the variation suggests process instability or chamber memory effects influencing etch behavior across runs.]] | [[File:slowetch2_100% loadSRN_etchrate.png|400px|left|thumb|Note: etch rate for SRN with Slowetch 2. The 4 wafers were processed on 4 different days, the variation suggests process instability or chamber memory effects influencing etch behavior across runs.]] | ||
[[File:SRN_etch_rate_uniformity_nochambercondition.png|400px|left|thumb|Note: Compared to the first dataset (with chamber cleaning), the second set shows higher variability in etch performance despite identical recipes. Wafer 5, without conditioning, had the highest etch rate (11.5 nm/min) but poor uniformity, while Wafer 6 showed lower etch rate with improved uniformity. This confirms chamber conditioning significantly stabilizes SRN etch rates and enhances wafer-to-wafer uniformity.]] | [[File:SRN_etch_rate_uniformity_nochambercondition.png|400px|left|thumb|Note: Compared to the first dataset (with chamber cleaning), the second set shows higher variability in etch performance despite identical recipes. Wafer 5, without conditioning, had the highest etch rate (11.5 nm/min) but poor uniformity, while Wafer 6 showed lower etch rate with improved uniformity. This confirms chamber conditioning significantly stabilizes SRN etch rates and enhances wafer-to-wafer uniformity.]] | ||
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'''SRN (LPCVD) etch uniformity on 6″ wafer | |||
'''Recipe: ''Slowetch''''' | |||
'''SRN (LPCVD) etch uniformity on 6″ wafer ''' | |||
[[File:SRN_slowetch_data_100%load.png|400px|left|thumb|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)<br/> | [[File:SRN_slowetch_data_100%load.png|400px|left|thumb|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)<br/> | ||
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'''With DUV mask on ~300 nm SRN layer''' | |||
[[File:SRN_slowetch_profilealong center.png|800px|left|thumb|Process: ''Slowetch recipe for 10 mins'', DUV mask (with Barc) ~750 nm, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)<br/> | |||
Note: The SEM images illustrate the etched SRN profiles across the wafer, progressing from one edge (left) through the center chip (middle) to the opposite edge (right), the etch rate is ~28 nm/min.]] | |||