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==== Silicon Nitride Recipe ====


{| border="2" cellspacing="2" cellpadding="3"
!Parameter
|Recipe name: '''Slow Etch'''
|Recipe name: '''Slow Etch2'''
 
|-
|Coil Power [W]
|350
|200


====Etch rate uniformity & etch rate====
|-
|Platen Power [W]
|25
|50


|-
|Platen temperature [<sup>o</sup>C]
|20
|20


'''SRN (LPCVD) etch uniformity on 6″ wafer with ''Slowetch 2'' recipe'''
|-
|H2 flow [sccm]
|15
|15
 
|-
|CF<sub>4</sub> flow [sccm]
|30
|30
 
|-
|Pressure [mTorr]
|3
|10
 
|-
|}
 
====Etch rate & uniformity====
 
'''Recipe: ''Slowetch 2'''''
 
'''SRN (LPCVD) etch uniformity on 6″ wafer'''
[[File:slowetch2_100% loadSRN.png|400px|left|thumb|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)]]
[[File:slowetch2_100% loadSRN.png|400px|left|thumb|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)]]
[[File:slowetch2_100% loadSRN_etchrate.png|400px|left|thumb|Note: etch rate for SRN with Slowetch 2. The wafers were processed on 4 different days,  the variation suggests process instability or chamber memory effects influencing etch behavior across runs.]]
[[File:slowetch2_100% loadSRN_etchrate.png|400px|left|thumb|Note: etch rate for SRN with Slowetch 2. The 4 wafers were processed on 4 different days,  the variation suggests process instability or chamber memory effects influencing etch behavior across runs.]]
[[File:SRN_etch_rate_uniformity_nochambercondition.png|400px|left|thumb|Note: Compared to the first dataset (with chamber cleaning), the second set shows higher variability in etch performance despite identical recipes. Wafer 5, without conditioning, had the highest etch rate (11.5 nm/min) but poor uniformity, while Wafer 6 showed lower etch rate with improved uniformity. This confirms chamber conditioning significantly stabilizes SRN etch rates and enhances wafer-to-wafer uniformity.]]
[[File:SRN_etch_rate_uniformity_nochambercondition.png|400px|left|thumb|Note: Compared to the first dataset (with chamber cleaning), the second set shows higher variability in etch performance despite identical recipes. Wafer 5, without conditioning, had the highest etch rate (11.5 nm/min) but poor uniformity, while Wafer 6 showed lower etch rate with improved uniformity. This confirms chamber conditioning significantly stabilizes SRN etch rates and enhances wafer-to-wafer uniformity.]]


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<br clear="all" />
<br clear="all" />
'''SRN (LPCVD) etch uniformity on 6″ wafer with ''Slowetch'' recipe'''


[[File:SRN_slowetch_data_100%load.png|400px|left|thumb|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)
'''Recipe: ''Slowetch'''''
 
'''SRN (LPCVD) etch uniformity on 6″ wafer '''
 
[[File:SRN_slowetch_data_100%load.png|400px|left|thumb|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)<br/>
Note: The ''slowetch'' recipe has faster etch recipe significantly improves etch rate (~30 nm/min) but leads to reduced uniformity (~2.5%) compared to the slower recipes (<1% uniformity). This highlights a trade-off between throughput and etch uniformity in SRN processing.]]
Note: The ''slowetch'' recipe has faster etch recipe significantly improves etch rate (~30 nm/min) but leads to reduced uniformity (~2.5%) compared to the slower recipes (<1% uniformity). This highlights a trade-off between throughput and etch uniformity in SRN processing.]]




<br clear="all" />


 
'''With DUV mask on ~300 nm SRN layer'''
[[File:SRN_slowetch_profilealong center.png|800px|left|thumb|Process: ''Slowetch recipe for 10 mins'', DUV mask (with Barc) ~750 nm, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)<br/>
Note: The SEM images illustrate the etched SRN profiles across the wafer, progressing from one edge (left) through the center chip (middle) to the opposite edge (right), the etch rate is ~28 nm/min.]]




Latest revision as of 14:34, 28 July 2025

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Silicon Nitride Recipe

Parameter Recipe name: Slow Etch Recipe name: Slow Etch2
Coil Power [W] 350 200
Platen Power [W] 25 50
Platen temperature [oC] 20 20
H2 flow [sccm] 15 15
CF4 flow [sccm] 30 30
Pressure [mTorr] 3 10

Etch rate & uniformity

Recipe: Slowetch 2

SRN (LPCVD) etch uniformity on 6″ wafer

Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)
Note: etch rate for SRN with Slowetch 2. The 4 wafers were processed on 4 different days, the variation suggests process instability or chamber memory effects influencing etch behavior across runs.
Note: Compared to the first dataset (with chamber cleaning), the second set shows higher variability in etch performance despite identical recipes. Wafer 5, without conditioning, had the highest etch rate (11.5 nm/min) but poor uniformity, while Wafer 6 showed lower etch rate with improved uniformity. This confirms chamber conditioning significantly stabilizes SRN etch rates and enhances wafer-to-wafer uniformity.
















Recipe: Slowetch

SRN (LPCVD) etch uniformity on 6″ wafer

Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)
Note: The slowetch recipe has faster etch recipe significantly improves etch rate (~30 nm/min) but leads to reduced uniformity (~2.5%) compared to the slower recipes (<1% uniformity). This highlights a trade-off between throughput and etch uniformity in SRN processing.



With DUV mask on ~300 nm SRN layer

Process: Slowetch recipe for 10 mins, DUV mask (with Barc) ~750 nm, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)
Note: The SEM images illustrate the etched SRN profiles across the wafer, progressing from one edge (left) through the center chip (middle) to the opposite edge (right), the etch rate is ~28 nm/min.






*The process was repeated twice, but only one set of data is presented here.

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