Specific Process Knowledge/Thin film deposition/Deposition of CrSi: Difference between revisions
Created page with "=CrSi as a hard mask= Cr is of particular interest in the dry etch as it serves as a durable hard mask in the quest to go beyond an aspect ratio of 100 in Si etching. To have..." |
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_CrSi click here]''' | |||
<i>This page is written by <b>Evgeniy Shkondin @DTU Nanolab</b> if nothing else is stated. <br> | |||
All images and photos on this page belongs to <b>DTU Nanolab</b>.<br> | |||
The fabrication and characterization described below were conducted in <b>2021-2022 by Evgeniy Shkondin</b> and <b>Henri Jansen, DTU Nanolab</b>.<br></i> | |||
=CrSi as a hard mask= | =CrSi as a hard mask= | ||
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This page presents the results of CrSi bilayer deposition using <b>DC</b> (for Cr) and <b>RF</b> (for Si) Sputtering in Sputter-System Metal-Oxide(PC1) tool commonly known as "Cluster Lesker". The deposition targets are 3" <b>Cr</b> and <b>Si</b>. Source #3(DC) and #1(RF) was used. | This page presents the results of CrSi bilayer deposition using <b>DC</b> (for Cr) and <b>RF</b> (for Si) Sputtering in Sputter-System Metal-Oxide(PC1) tool commonly known as "Cluster Lesker". The deposition targets are 3" <b>Cr</b> and <b>Si</b>. Source #3(DC) and #1(RF) was used. | ||
Spectroscopic Ellipsometry and X-ray reflectivity was used for characterization. The main focus of the study was the deposition rate and thickness measurements. | |||
=Recipe= | =Recipe= | ||
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It must be mentioned that the dark space shield should be in a “closed-form” only, as it was observed that the “opened” dark space shield configuration can do a side wall Cu sputtering. This will heavily contaminate the film and gradually damage the tool. | It must be mentioned that the dark space shield should be in a “closed-form” only, as it was observed that the “opened” dark space shield configuration can do a side wall Cu sputtering. This will heavily contaminate the film and gradually damage the tool. | ||
<gallery caption="Si target with dark space shield configuration and measured uniformity of deposited Si. " widths=" | <gallery caption="Si target with dark space shield configuration and measured uniformity of deposited Si. " widths="400px" heights="350px" perrow="2"> | ||
image:eves_closed_dark_space_shield.png| Closed dark space shield configuration. | image:eves_closed_dark_space_shield.png| Closed dark space shield configuration. | ||
image:eves_Si_120W_20211110.png|Uniformity of deposited Si layer across 6" wafer. | image:eves_Si_120W_20211110.png|Uniformity of deposited Si layer across 6" wafer. | ||