Specific Process Knowledge/Etch/KOH Etch/ProcessInfo: Difference between revisions
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==QC== | ==QC== | ||
===Quality Control (QC) for the KOH Si etching baths.=== | ===Quality Control (QC) for the KOH Si etching baths.=== | ||
''All links in the table below reguire login to labmanager | '''All links in the table below reguire login to labmanager''' | ||
{| border="1" cellspacing="2" cellpadding="2" colspan="3" | {| border="1" cellspacing="2" cellpadding="2" colspan="3" | ||
|bgcolor="#98FB98" |'''Quality Control (QC) for Si Etch 01, and Si Etch 02''' | |bgcolor="#98FB98" |'''Quality Control (QC) for Si Etch 01, and Si Etch 02''' | ||
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*[http://labmanager.dtu.dk/d4Show.php?id=5476&mach=407 The QC procedure for Si Etch: 03]<br> | *[http://labmanager.dtu.dk/d4Show.php?id=5476&mach=407 The QC procedure for Si Etch: 03]<br> | ||
{| {{table}} | {| {{table}} | ||
| align="center" | | | align="center" | | ||
{| border="1" cellspacing="1" cellpadding="2" align="center" style="width:200px" | {| border="1" cellspacing="1" cellpadding="2" align="center" style="width:200px" | ||
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|Time | |Time | ||
|90 min | |90 min | ||
|- | |- | ||
|Substrate | |Substrate | ||
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<math>X=\frac{(Y\cdot 1000g)}{(1.509g/ml\cdot(0.5-Y))}</math> | <math>X=\frac{(Y\cdot 1000g)}{(1.509g/ml\cdot(0.5-Y))}</math> | ||
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Due to the almost inert (111)-planes it is possible by KOH etching to realize high aspect ratio structures in sigle crytalline silicon using the (111)-planes as sidewalls. In Si(100) these sidewalls are inclined - 54.7<sup>o</sup> with respect to the (100) surface - whereas in Si(110) the sidewalls are vertical (see figures below). | Due to the almost inert (111)-planes it is possible by KOH etching to realize high aspect ratio structures in sigle crytalline silicon using the (111)-planes as sidewalls. In Si(100) these sidewalls are inclined - 54.7<sup>o</sup> with respect to the (100) surface - whereas in Si(110) the sidewalls are vertical (see figures below). | ||
<gallery caption="Anisotropic wet silicon etch: dependency on crystal orientation" widths=" | <gallery caption="Anisotropic wet silicon etch: dependency on crystal orientation" widths="760px" heights="150px" perrow="1"> | ||
Image:KOH-etch. | Image:KOH-etch.JPG|Etched profile when etching Si(100) and when etching Si(110) respectively | ||
<!-- Image:KOH_Anisotropy.jpg|Etched profile when etching Si(100).--> | <!-- Image:KOH_Anisotropy.jpg|Etched profile when etching Si(100).--> | ||
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<math>W_b = W_o - 2d cot(54.7^o) = W_o - \sqrt{2} d</math> | <math>W_b = W_o - 2d cot(54.7^o) = W_o - \sqrt{2} d</math> | ||