Specific Process Knowledge/Thin film deposition/Deposition of NiV: Difference between revisions
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==Sputtering of Nickel Vanadium== | ==Sputtering of Nickel Vanadium== | ||
Nickel Vanadium may be sputter deposited in | Nickel Vanadium may be sputter deposited in the Sputter-system (Lesker) and the Sputter-system Metal-Oxide (PC1). The following pages show both process parameters and data on surface roughness of the deposited films: | ||
* [[/Sputtering of NiV in Lesker|Sputtering of NiV in Lesker]] | * [[/Sputtering of NiV in Lesker|Sputtering of NiV in Sputter-System (Lesker)]] | ||
* [[/Sputtering of NiV in Wordentec|Sputtering of NiV in Wordentec]] | * [[/Sputtering of NiV in Sputter-System Metal-Oxide (PC1)|Sputtering of NiV in Sputter-System Metal-Oxide (PC1)]] | ||
* [[/Sputtering of NiV in Wordentec|Sputtering of NiV in Wordentec]] (tool now decommissioned, but results are of general interest) | |||
In the chart below you can compare the | In the chart below you can compare the available sputter systems: | ||
{| border="1" cellspacing="0" cellpadding="4" | {| border="1" cellspacing="0" cellpadding="4" | ||
| Line 16: | Line 17: | ||
|Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System Lesker]]) | |Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System Lesker]]) | ||
|Sputter deposition ([[Specific Process Knowledge/Thin film deposition/ | |Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | ||
|- | |- | ||
| Line 28: | Line 29: | ||
! Pre-clean | ! Pre-clean | ||
| | | none | ||
|RF Ar clean | |RF Ar clean | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
| Line 34: | Line 35: | ||
|About 10Å to 5000Å | |About 10Å to 5000Å | ||
| | |About 10Å to 5000Å | ||
|- | |- | ||
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! Deposition rate | ! Deposition rate | ||
|Depending on process parameters(normally less than 1 | |Depending on process parameters(normally less than 1 Å/s). | ||
|Depending on process parameters(normally less than 1 | |Depending on process parameters(normally less than 1 Å/s). | ||
|- | |- | ||
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*1x4" wafer or | *1x4" wafer or | ||
*1x6" wafer | *1x6" wafer | ||
| | | | ||
* | *Up to 10x4" or 6" wafers | ||
*Many smaller pieces | |||
* | |||
|- | |- | ||
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* Quartz wafers | * Quartz wafers | ||
* Pyrex wafers(No substrate heating) | * Pyrex wafers(No substrate heating) | ||
| | | | ||
* | * Almost any that do not outgas. | ||
|- | |- | ||
| Line 85: | Line 87: | ||
* Carbon | * Carbon | ||
| | | | ||
* | * Almost any that do not outgas. | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Target size | ! Target size | ||
| 2 inch sputter target | | 2 inch sputter target | ||
| | | 3 inch sputter target | ||
(or in special cases 4 inch) | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
| Line 106: | Line 103: | ||
| | | | ||
*Sputter target with NiV composition: Ni/V 93/7% | *Sputter target with NiV composition: Ni/V 93/7% | ||
*Substrate rotation | |||
| | |||
*Sputter target with NiV composition: Ni/V 93/7% | |||
*Substrate rotation | *Substrate rotation | ||
*Substrate RF Bias (optional) | *Substrate RF Bias (optional) | ||
*Substrate heating to 600 C | |||
* | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||