Specific Process Knowledge/Thin film deposition/Deposition of NiV

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Sputtering of Nickel Vanadium

Nickel Vanadium may be sputter deposited in the Sputter-system (Lesker) and the Sputter-system Metal-Oxide (PC1). The following pages show both process parameters and data on surface roughness of the deposited films:

• Sputtering of NiV in Sputter-System (Lesker)
• Sputtering of NiV in Sputter-System Metal-Oxide (PC1)
• Sputtering of NiV in Wordentec (tool now decommissioned, but results are of general interest)

In the chart below you can compare the available sputter systems:

	Sputter deposition (Sputter-System Lesker)	Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description	Sputter deposition of NiV	Sputter deposition of NiV
Pre-clean	none	RF Ar clean
Layer thickness	About 10Å to 5000Å	About 10Å to 5000Å
Deposition rate	Depending on process parameters(normally less than 1 Å/s).	Depending on process parameters(normally less than 1 Å/s).
Batch size	Pieces or 1x4" wafer or 1x6" wafer	Up to 10x4" or 6" wafers Many smaller pieces
Allowed substrates	Silicon wafers Quartz wafers Pyrex wafers(No substrate heating)	Almost any that do not outgas.
Allowed materials	Silicon Silicon oxide Silicon nitride Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals Carbon	Almost any that do not outgas.
Target size	2 inch sputter target	3 inch sputter target (or in special cases 4 inch)
Comment	Sputter target with NiV composition: Ni/V 93/7% Substrate rotation	Sputter target with NiV composition: Ni/V 93/7% Substrate rotation Substrate RF Bias (optional) Substrate heating to 600 C