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==Sputtering of Nickel Vanadium==
==Sputtering of Nickel Vanadium==


Nickel Vanadium may be sputter deposited in either Sputter-system (Lesker) or PVD co-sputter/evaporation
Nickel Vanadium may be sputter deposited in the Sputter-system (Lesker) and the Sputter-system Metal-Oxide (PC1). The following pages show both process parameters and data on surface roughness of the deposited films:


* [[/Sputtering of NiV in Lesker|Sputtering of NiV in Sputter-System (Lesker)]]
* [[/Sputtering of NiV in Sputter-System Metal-Oxide (PC1)|Sputtering of NiV in Sputter-System Metal-Oxide (PC1)]]
* [[/Sputtering of NiV in Wordentec|Sputtering of NiV in Wordentec]] (tool now decommissioned, but results are of general interest)


In the chart below you can compare the different deposition equipment.
 
In the chart below you can compare the available sputter systems:


{| border="1" cellspacing="0" cellpadding="4"  
{| border="1" cellspacing="0" cellpadding="4"  
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|Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System Lesker]])
|Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System Lesker]])
|Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
|-  
|-  


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! General description
! General description
| Sputter deposition of NiV
| Sputter deposition of NiV
| Sputter deposition of NiV
|-
|-
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! Pre-clean
! Pre-clean


| none
|RF Ar clean
|RF Ar clean
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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|About 10Å to 5000Å
|About 10Å to 5000Å
|About 10Å to 5000Å
|-
|-


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! Deposition rate
! Deposition rate


|Depending on process parameters.
|Depending on process parameters(normally less than 1 Å/s).
|Depending on process parameters(normally less than 1 Å/s).


|-
|-
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*1x4" wafer or
*1x4" wafer or
*1x6" wafer
*1x6" wafer
|
*Up to 10x4" or 6" wafers
*Many smaller pieces
|-
|-


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* Silicon wafers
* Silicon wafers
* Quartz wafers
* Quartz wafers
* Pyrex wafers(No substrate heating)
|
* Almost any that do not outgas.


|-
|-
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* Metals  
* Metals  
* Carbon
* Carbon
|
* Almost any that do not outgas.


|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Target size
| 2 inch sputter target
| 3 inch sputter target
(or in special cases 4 inch)
|-
|-style="background:WhiteSmoke; color:black"
! Comment
! Comment


| Sputter target with NiV composition: Ni/V 93/7%
|  
*Sputter target with NiV composition: Ni/V 93/7%
*Substrate rotation
|
*Sputter target with NiV composition:  Ni/V 93/7%
*Substrate rotation
*Substrate RF Bias (optional)
*Substrate heating to 600 C
 
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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