Specific Process Knowledge/Thin film deposition/Deposition of NiV: Difference between revisions
| (18 intermediate revisions by 3 users not shown) | |||
| Line 3: | Line 3: | ||
==Sputtering of Nickel Vanadium== | ==Sputtering of Nickel Vanadium== | ||
Nickel Vanadium may be sputter deposited in | Nickel Vanadium may be sputter deposited in the Sputter-system (Lesker) and the Sputter-system Metal-Oxide (PC1). The following pages show both process parameters and data on surface roughness of the deposited films: | ||
* [[/Sputtering of NiV in Lesker|Sputtering of NiV in Sputter-System (Lesker)]] | |||
* [[/Sputtering of NiV in Sputter-System Metal-Oxide (PC1)|Sputtering of NiV in Sputter-System Metal-Oxide (PC1)]] | |||
* [[/Sputtering of NiV in Wordentec|Sputtering of NiV in Wordentec]] (tool now decommissioned, but results are of general interest) | |||
In the chart below you can compare the | |||
In the chart below you can compare the available sputter systems: | |||
{| border="1" cellspacing="0" cellpadding="4" | {| border="1" cellspacing="0" cellpadding="4" | ||
| Line 12: | Line 16: | ||
! | ! | ||
|Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System Lesker]]) | |||
|Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]]) | |||
|- | |- | ||
| Line 25: | Line 29: | ||
! Pre-clean | ! Pre-clean | ||
| | | none | ||
|RF Ar clean | |RF Ar clean | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Layer thickness | ! Layer thickness | ||
|About 10Å to 5000Å | |About 10Å to 5000Å | ||
|About 10Å to 5000Å | |||
|- | |- | ||
| Line 37: | Line 42: | ||
! Deposition rate | ! Deposition rate | ||
|Depending on process parameters. | |Depending on process parameters(normally less than 1 Å/s). | ||
|Depending on process parameters. | |Depending on process parameters(normally less than 1 Å/s). | ||
|- | |- | ||
| Line 45: | Line 50: | ||
! Batch size | ! Batch size | ||
| | | | ||
*Pieces or | *Pieces or | ||
*1x4" wafer or | *1x4" wafer or | ||
*1x6" wafer | *1x6" wafer | ||
| | |||
*Up to 10x4" or 6" wafers | |||
*Many smaller pieces | |||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Allowed substrates | ! Allowed substrates | ||
| | | | ||
* Silicon wafers | * Silicon wafers | ||
* Quartz wafers | * Quartz wafers | ||
* Pyrex wafers | * Pyrex wafers(No substrate heating) | ||
| | | | ||
* | * Almost any that do not outgas. | ||
|- | |- | ||
| Line 70: | Line 74: | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!Allowed materials | !Allowed materials | ||
| | | | ||
* Silicon | * Silicon | ||
| Line 90: | Line 86: | ||
* Metals | * Metals | ||
* Carbon | * Carbon | ||
| | |||
* Almost any that do not outgas. | |||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Target size | |||
| 2 inch sputter target | |||
| 3 inch sputter target | |||
(or in special cases 4 inch) | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
! Comment | ! Comment | ||
| Sputter target with NiV composition: Ni/V 93/7% | | | ||
| Sputter target with NiV composition: Ni/V 93/7% | *Sputter target with NiV composition: Ni/V 93/7% | ||
*Substrate rotation | |||
| | |||
*Sputter target with NiV composition: Ni/V 93/7% | |||
*Substrate rotation | |||
*Substrate RF Bias (optional) | |||
*Substrate heating to 600 C | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||