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==Sputtering of Nickel Vanadium==
==Sputtering of Nickel Vanadium==


Nickel Vanadium may be sputter deposited in either Sputter-system (Lesker) or PVD co-sputter/evaporation
Nickel Vanadium may be sputter deposited in the Sputter-system (Lesker) and the Sputter-system Metal-Oxide (PC1). The following pages show both process parameters and data on surface roughness of the deposited films:


*[[/Sputter rates for NiV PVD co-sputter/evaporation|Sputtering of Nickel Vanadium in PVD co-sputter/evaporation]]
* [[/Sputtering of NiV in Lesker|Sputtering of NiV in Sputter-System (Lesker)]]
* [[/Sputtering of NiV in Sputter-System Metal-Oxide (PC1)|Sputtering of NiV in Sputter-System Metal-Oxide (PC1)]]
* [[/Sputtering of NiV in Wordentec|Sputtering of NiV in Wordentec]] (tool now decommissioned, but results are of general interest)




In the chart below you can compare the different deposition equipment.
In the chart below you can compare the available sputter systems:


{| border="1" cellspacing="0" cellpadding="4"  
{| border="1" cellspacing="0" cellpadding="4"  
Line 14: Line 16:
!  
!  


! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
|Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System Lesker]])
|Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
|-  
|-  


Line 27: Line 29:
! Pre-clean
! Pre-clean


|RF Ar clean
| none
|RF Ar clean
|RF Ar clean
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Layer thickness
! Layer thickness


|About 10Å to 4000Å
|About 10Å to 5000Å
|About 10Å to 5000Å
|About 10Å to 5000Å
|-
|-


Line 39: Line 42:
! Deposition rate
! Deposition rate


|Depending on process parameters.
|Depending on process parameters(normally less than 1 Å/s).
|Depending on process parameters.
|Depending on process parameters(normally less than 1 Å/s).


|-
|-
Line 47: Line 50:
! Batch size
! Batch size


|
*12x2" wafers or
*12x4" wafers or
*4x6" wafers
|
|
*Pieces or
*Pieces or
*1x4" wafer or
*1x4" wafer or
*1x6" wafer
*1x6" wafer
|
*Up to 10x4" or 6" wafers
*Many smaller pieces
|-
|-


|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Allowed substrates
! Allowed substrates
 
|  
|
* Silicon wafers
* Silicon wafers
* Quartz wafers
* Quartz wafers
* Pyrex wafers  
* Pyrex wafers(No substrate heating)
|
|
* Silicon wafers
* Almost any that do not outgas.
* Quartz wafers


|-
|-
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Allowed materials
!Allowed materials
|
 
* Silicon
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
|
* Silicon
* Silicon
Line 92: Line 86:
* Metals  
* Metals  
* Carbon
* Carbon
|
* Almost any that do not outgas.


|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Target size
| 2 inch sputter target
| 3 inch sputter target
(or in special cases 4 inch)
|-
|-style="background:WhiteSmoke; color:black"
! Comment
! Comment


| Sputter target with NiV composition: Ni/V 93/7%  
|  
| Sputter target with NiV composition: Ni/V 93/7%
*Sputter target with NiV composition: Ni/V 93/7%
*Substrate rotation
|  
*Sputter target with NiV composition: Ni/V 93/7%
*Substrate rotation
*Substrate RF Bias (optional)
*Substrate heating to 600 C
 
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"

Latest revision as of 11:11, 18 July 2025

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Sputtering of Nickel Vanadium

Nickel Vanadium may be sputter deposited in the Sputter-system (Lesker) and the Sputter-system Metal-Oxide (PC1). The following pages show both process parameters and data on surface roughness of the deposited films:


In the chart below you can compare the available sputter systems:

Sputter deposition (Sputter-System Lesker) Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description Sputter deposition of NiV Sputter deposition of NiV
Pre-clean none RF Ar clean
Layer thickness About 10Å to 5000Å About 10Å to 5000Å
Deposition rate Depending on process parameters(normally less than 1 Å/s). Depending on process parameters(normally less than 1 Å/s).
Batch size
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer
  • Up to 10x4" or 6" wafers
  • Many smaller pieces
Allowed substrates
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers(No substrate heating)
  • Almost any that do not outgas.
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Carbon
  • Almost any that do not outgas.


Target size 2 inch sputter target 3 inch sputter target

(or in special cases 4 inch)

Comment
  • Sputter target with NiV composition: Ni/V 93/7%
  • Substrate rotation
  • Sputter target with NiV composition: Ni/V 93/7%
  • Substrate rotation
  • Substrate RF Bias (optional)
  • Substrate heating to 600 C
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