Specific Process Knowledge/Thin film deposition/Deposition of NiV: Difference between revisions

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-Nickel Vanadium can be deposited by sputter evaporation. In the chart below you can compare the different deposition equipment.
+'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_NiV click here]'''
+==Sputtering of Nickel Vanadium==
+Nickel Vanadium may be sputter deposited in the Sputter-system (Lesker) and the Sputter-system Metal-Oxide (PC1). The following pages show both process parameters and data on surface roughness of the deposited films:
+* [[/Sputtering of NiV in Lesker|Sputtering of NiV in Sputter-System (Lesker)]]
+* [[/Sputtering of NiV in Sputter-System Metal-Oxide (PC1)|Sputtering of NiV in Sputter-System Metal-Oxide (PC1)]]
+* [[/Sputtering of NiV in Wordentec|Sputtering of NiV in Wordentec]] (tool now decommissioned, but results are of general interest)
+In the chart below you can compare the available sputter systems:
 {| border="1" cellspacing="0" cellpadding="4"
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 !
-! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
+|Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System Lesker]])
-! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System Lesker]])
+|Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
 |-
 |-style="background:WhiteSmoke; color:black"
-! Batch size
+! General description
+| Sputter deposition of NiV
+| Sputter deposition of NiV
+|-
-|
-*12x2" wafers or
-*12x4" wafers or
-*4x6" wafers
-|
-*1x4" wafer or
-*1x6" wafer
-|-
 |-style="background:LightGrey; color:black"
 ! Pre-clean
+| none
 |RF Ar clean
-|
-|-
 |-style="background:WhiteSmoke; color:black"
 ! Layer thickness
-|About 10Å to 4000Å
+|About 10Å to 5000Å
-|.
+|About 10Å to 5000Å
 |-
 |-style="background:LightGrey; color:black"
 ! Deposition rate
-|Depending on process parameters.
+|Depending on process parameters(normally less than 1 Å/s).
-|Depending on process parameters.
+|Depending on process parameters(normally less than 1 Å/s).
 |-
+|-style="background:WhiteSmoke; color:black"
+! Batch size
+|
+*Pieces or
+*1x4" wafer or
+*1x6" wafer
+|
+*Up to 10x4" or 6" wafers
+*Many smaller pieces
+|-
+|-style="background:LightGrey; color:black"
+! Allowed substrates
+|
+* Silicon wafers
+* Quartz wafers
+* Pyrex wafers(No substrate heating)
+|
+* Almost any that do not outgas.
 |-
 |-style="background:WhiteSmoke; color:black"
 !Allowed materials
 |
+* Silicon
 * Silicon oxide
+* Silicon nitride
 * Silicon (oxy)nitride
 * Photoresist
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 * SU-8
 * Metals
+* Carbon
 |
-* Silicon wafers
+* Almost any that do not outgas.
-*
 |-style="background:LightGrey; color:black"
+! Target size
+| 2 inch sputter target
+| 3 inch sputter target
+(or in special cases 4 inch)
+|-
+|-style="background:WhiteSmoke; color:black"
 ! Comment
-| Sputter target with NiV composition: Ni/V 93/7%
+|
-| Sputter target with NiV composition: Ni/V 93/7%
+*Sputter target with NiV composition: Ni/V 93/7%
+*Substrate rotation
+|
+*Sputter target with NiV composition:  Ni/V 93/7%
+*Substrate rotation
+*Substrate RF Bias (optional)
+*Substrate heating to 600 C
 |-
 |-style="background:WhiteSmoke; color:black"