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Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow etch: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
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|-
|-
|Etch rate of SiO2
|Etch rate of SiO2
|'''~42nm/min [41-43 nm/min over a 6" wafer]
|'''~42nm/min [41-43 nm/min over a 6" wafer]  
|'''13.7-14.7 nm/min [4" on carrier]
|'''13.7-14.7 nm/min [4" on carrier]


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