Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow etch: Difference between revisions
Appearance
No edit summary |
|||
| (22 intermediate revisions by the same user not shown) | |||
| Line 1: | Line 1: | ||
=The slow etch= | =The slow etch= | ||
'''''This work is done by Berit Herstrøm @DTU Nanolab, is nothing else is stated''''' <br> | |||
The slow etch is designed to etch slow at low powers to etch thin films and to avoid overheating of samples mounted on a carrier with Capton/polyimide tape | The slow etch is designed to etch slow at low powers to etch thin films and to avoid overheating of samples mounted on a carrier with Capton/polyimide tape | ||
| Line 42: | Line 43: | ||
{| border="2" cellspacing="2" cellpadding="3" | {| border="2" cellspacing="2" cellpadding="3" | ||
!Typical results | !Typical results | ||
! | !'''Slow Etch''' | ||
!'''Slow Etch2''' | |||
|- | |- | ||
|Etch of SRN | |Etch of SRN | ||
|'''~43nm/min [measured 39-50 nm/min over a 6" wafer] | |'''~43nm/min [measured 39-50 nm/min over a 6" wafer] | ||
|''' | |'''23-25 nm/min [4" on carrier]] | ||
|- | |- | ||
|Etch rate of Si3N4 | |Etch rate of Si3N4 | ||
|'''~ | |'''~49 nm/min [4" on carrier] | ||
|'''24-26 nm/min [4" on carrier] | |||
|- | |- | ||
|Etch rate of SiO2 | |Etch rate of SiO2 | ||
|'''~42nm/min [41-43 nm/min over a 6" wafer] | |'''~42nm/min [41-43 nm/min over a 6" wafer] | ||
| | |'''13.7-14.7 nm/min [4" on carrier] | ||
|- | |- | ||
|Etch rate of | |Etch rate in Si | ||
|'''ñm/min | |||
|'''11-13 nm/min (10% load, 4" wafer on 6" carrier) | |||
|- | |||
|Etch rate of Mir resist | |||
|'''~nm/min | |'''~nm/min | ||
| | |'''~17 nm/min | ||
|- | |||
|Tested etch time without burning the resist | |||
|3 min (6 min => resist burned) | |||
|30 min | |||
|- | |- | ||
|Profile [<sup>o</sup>] | |Profile [<sup>o</sup>] | ||
| Line 72: | Line 81: | ||
|} | |} | ||
==Etch Profile SEM images== | |||
<gallery caption="Profile of etch for 'Slow Etch2' 12 min, 100mm wafer on 150mm carrier with double side polyimide tape (capton), Si3N4 from LPCVD" widths="300px done by bghe, DTU Nanolab" heights="300px" widths="400px" perrow="3"> | |||
File:C08507_01.jpg | |||
File:C08507_02.jpg | |||
File:C08507_04.jpg | |||
</gallery> | |||
==Etch Uniformity maps== | |||
<br clear="all" /> | <br clear="all" /> | ||
<gallery caption="Map of etch rate measurements" widths="300px" heights="300px" perrow="2"> | <gallery caption="Map of etch rate measurements for 'Slow Etch'" widths="300px" heights="300px" perrow="2"> | ||
File:contour plot for etchrate of slow etch in SiO2.JPG| Etch rate map of SiO2 etch on 6" wafer | File:contour plot for etchrate of slow etch in SiO2.JPG| Etch rate map of SiO2 etch on 6" wafer | ||
File:contour plot for etchrate of slow etch in SRN.JPG| Etch rate map of SRN etch on 6" wafer | File:contour plot for etchrate of slow etch in SRN.JPG| Etch rate map of SRN etch on 6" wafer | ||
</gallery> | </gallery> | ||
<gallery caption="Map of etch rate measurements for 'Slow Etch2'" widths="300px" heights="300px" perrow="2"> | |||
File:Contour Plot etch rates Si3N4.jpg| Etch rate map of Si3N4 etch on 4" wafer (on 6" carrier) | |||
File:Contour Plot etch rates SRN.jpg| Etch rate map of SRN etch on 4" wafer (on 6" carrier) | |||
File:Contour Plot etch rates SiO2.jpg|Etch rate map of SiO2 etch on 4" wafer (on 6" carrier) | |||
File:Contour Plot etch rates Si.jpg|Etch rate map of Si etch on 4" wafer (on 6" carrier) | |||
</gallery> | |||
==Test section - do not use== | |||
{| class="wikitable" | |||
|+ Caption text | |||
|- | |||
! A !! Header text !! Header text | |||
|- | |||
| Example || Example || Example | |||
|- | |||
| Example || Example || Example | |||
|- | |||
| Example || Example || Example | |||
|} | |||