Specific Process Knowledge/Thin film deposition/Deposition of TiW: Difference between revisions

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-Deposition of TiW alloy can take place in the Wordentec.
+'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_TiW click here]'''
+<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
-{| border="1" cellspacing="0" cellpadding="4"
+==Sputtering of TiW==
-!
-! Sputter deposition (Wordentec)
-|-
-| Batch size
-|
-*24x2" wafers or
-*6x4" wafers or
-*6x6" wafers
-|-
-| Pre-clean
-|RF Ar clean
-|-
-| Layer thickness
-|.
-|-
-| Deposition rate
-|Depending on process parameters, see [[/Sputtering of TiW in Wordentec|here.]]
-|-
-|}
+Deposition of TiW alloy was done in the past in the [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]. This tool is now decommissioned, and if necessary processes may be developed for depositing TiW in the Lesker sputter setups (contact responsible staff for this).
+*[[/Sputtering of TiW in Wordentec|Sputtering of TiW in Wordentec]]
-This is done by a sputtering process. Process parameters (argon pressure and effect) can be varied, the surface roughness and the deposition rate (see [[Sputtering of TiW in Wordentec|here]]) and may change with these settings.
+*[[Specific Process Knowledge/Thin film deposition/Deposition of TiW/Sputtering of TiW in Wordentec/Grain size and uniformity of TiW layers|Results of a study on the grain size and uniformity of TiW sputtered in the Wordentec]]