Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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==Deposition of Silicon using sputter deposition== | ==Deposition of Silicon using sputter deposition== | ||
At Nanolab we can sputter silicon with the Lesker Sputter systems (both the single chamber and dual chamber systems). One of the advantages of sputtering is that you can deposit on almost any material you like. In the cluster system you can heat the substrate up to 600 | At Nanolab we can sputter silicon with the Lesker Sputter systems (both the single chamber and dual chamber systems). One of the advantages of sputtering is that you can deposit on almost any material you like. In the cluster system you can heat the substrate up to 600 °C. | ||
* [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Lesker|Si sputter deposition in the Sputter-System (Lesker)]] - ''includes information on surface roughness and stress'' | * [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Lesker|Si sputter deposition in the Sputter-System (Lesker)]] - ''includes information on surface roughness and stress'' | ||
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==Deposition of Silicon using e-beam evaporation== | ==Deposition of Silicon using e-beam evaporation== | ||
It is possible to e-beam evaporate silicon at Nanolab using the [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]. As with sputtering you can deposit on almost any material. In e-beam evaporation the deposition is line-of-sight and will be suitable for lift-off. However for 8" wafers the system is not optimized for lift-off on the full diameter of the wafer. | It is possible to e-beam evaporate silicon at Nanolab using the [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]], where the substrate can be heated up to 250 °C. As with sputtering you can deposit on almost any material. In e-beam evaporation the deposition is line-of-sight and will be suitable for lift-off. However for 8" wafers the system is not optimized for lift-off on the full diameter of the wafer. | ||
* [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si evaporation in E-beam evaporator Temescal-2|Si evaporation in E-beam evaporator (10-pockets)]] | * [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si evaporation in E-beam evaporator Temescal-2|Si evaporation in E-beam evaporator (10-pockets)]] | ||
==Comparison of the methods for deposition of Silicon== | ==Comparison of the methods for deposition of Silicon== | ||
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|few nm to >200 nm | |few nm to >200 nm | ||
|few nm to ? | |few nm to ? | ||
|few nm to | |few nm to 600 nm | ||
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