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Specific Process Knowledge/Thin film deposition/Deposition of Titanium: Difference between revisions

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!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! General description
! General description
|E-beam deposition of Titanium (line-of-sight deposition)
|E-beam deposition of Titanium (line-of-sight deposition)
|E-beam deposition of Titanium (line-of-sight deposition)
|Sputter deposition of Titanium (some step coverage)
|Sputter deposition of Titanium (some step coverage)
|Sputter deposition of Titanium (some step coverage)
|Sputter deposition of Titanium including HiPIMS and Pulsed DC (some step coverage)
|Sputter deposition of Titanium including HiPIMS and Pulsed DC (some step coverage)
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|Ar ion etch (only in E-beam evaporator Temescal)
|Ar ion etch (only in E-beam evaporator Temescal)
|
|
|
|RF Ar clean
|RF Ar clean
|RF Ar clean
|-
|-
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! Layer thickness
! Layer thickness
|10Å to 1 µm*
|10Å to 1 µm*
|10Å to 1 µm*
|.
|.
|.
|.
|.
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! Deposition rate
! Deposition rate
|1 Å/s to 10Å/s
|1 Å/s to 10Å/s
|few Å/s to 15Å/s
|Depending on process parameters
|Depending on process parameters, about 1 Å/s.
|Depending on process parameters, about 1 Å/s.
|Depending on process parameters
|Depending on process parameters
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*Up to 3x8" wafers (ask for holder)
*Up to 3x8" wafers (ask for holder)
*smaller pieces
*smaller pieces
|
*24x2" wafers or
*6x4" wafers or
*6x6" wafers
|
*24x2" wafers or
*6x4" wafers or
*6x6" wafers
|
|
* Smaller pieces
* Smaller pieces
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Allowed substrates
! Allowed materials


|  
|  
*Almost any as long as they do not degas. See cross-contamination sheet.
|
*Almost any as long as they do not degas. See cross-contamination sheet.
*Almost any as long as they do not degas. See cross-contamination sheet.
|
|
*Almost any as long as they do not degas. See cross-contamination sheet.
*Almost any as long as they do not degas. See cross-contamination sheet.
|
*Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheet.
|
|
*Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheet.
*Almost any as long as they do not degas at the substrate temperature used for your process. See cross-contamination sheet.
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Allowed materials
|
*Almost any as noted above
|
*Almost any as noted above
|
*Almost any as noted above
|
*Almost any as noted above
|
*Almost any as noted above
|-style="background:LightGrey; color:black"
! Comment
! Comment
|
|  
|
|
|
|


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