Specific Process Knowledge/Thin film deposition/Deposition of Tin: Difference between revisions

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-'''Feedback to this page''': '''[mailto:pvd@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tin&action=edit click here]'''
+= Tin Deposition =
-== Tin deposition ==
+Tin can be deposited by sputtering, thermal evaporation or e-beam evaporation in DTU Nanolab's cleanroom.
-Tin can be deposited by e-beam evaporation. It was evaporated in the Alcatel e-beam evaporator, which is being decommissioned, but has not yet been evaporated in the Physimeca or the Temescal, which we have now (August 2018). Please contact the Thin Film group if you would like to deposit tin.
+==Sputtering of tin==
+We have sputtered tin in both the [[Specific Process Knowledge/Thin film deposition/Lesker|Sputter system (Lesker)]] and the [[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1)]]. In the former we have also tested co-sputtering with Cu. In the latter we have more recent results (2025). The initial films were quite rough. Please contact staff for more information.
+==E-beam evaporation of tin==
+Sn was evaporated in the Alcatel e-beam evaporator, which is decommissioned, but has only been tested once in the [[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] which is currently in the lab. The test resulted in a rather uneven film (more resembling islands of Sn than a continuous layer) and since results with sputtering were more promising we did not fully develop the recipe (spring 2025).
+==Thermal evaporation of tin ==
+Sn thermal evaporation has been tested in early 2025. The required power varied quite a lot from run to run so we do not have a fully automated reliable process. The resulting films were very rough.
+==Comparison of deposition methods==
 {| border="1" cellspacing="0" cellpadding="3"
 |-style="background:silver; color:black"
 !
 ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
+! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]])
+! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
+! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
 |-
 |-style="background:WhiteSmoke; color:black"
 ! General description
-| E-beam deposition of Sn
+| E-beam deposition of Sn (line-of-sight)
-(line-of-sight deposition)
+| Thermal deposition of Sn (line-of-sight)
+| Sputter deposition of Sn (some step coverage)
+| Sputter deposition of Sn (pulsed DC, HiPIMS and substrate heating available)
 |-
 |-style="background:LightGrey; color:black"
 !Pre-clean
 |Ar ion  clean
+|none
+|none
+|RF sputter cleaning
 |-
 |-style="background:WhiteSmoke; color:black"
 !Layer thickness
-|10Å to 1µm*
+| discuss with staff
+nm to at least 100 nm
+| discuss with staff
+nm to at least 50 nm
+| discuss with staff
+| discuss with staff
+nm to at least 50 nm
 |-
 |-style="background:LightGrey; color:black"
 ! Deposition rate
-|1Å/s to 10Å/s
+| discuss with staff (on the order of 1-5 Å/s)
+| discuss with staff (on the order of 1-5 Å/s)
+| discuss with staff
+| discuss with staff (on the order of 1-2 Å/s)
 |-
 |-style="background:WhiteSmoke; color:black"
 !Pre-clean
 |Ar ion bombardment
+|none
+|none
+|RF sputter cleaning
 |-style="background:LightGrey; color:black"
 ! Batch size
 |
-*Up to 4x6" wafers
+*Up to 4x6" wafers or
-*Up to 3x8" wafers (ask for holder)
+*Up to 3x8" wafers or
-*small pieces
+*smaller pieces
+|
+*Up to 1x8" wafer or 1x6" wafer
+*Up to 3x4" wafers
+*smaller pieces
+|
+*1x6" wafers or
+*1x4" wafers or
+*smaller pieces
+|
+*up to 10x6" wafers or
+*up to 10x4" wafers or
+*many smaller pieces
 |-
 |-style="background:WhiteSmoke; color:black"
 !Allowed materials
+|
+* Almost any that does not outgas
+*See also the [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
 |
-* Silicon
+* Almost any that do not degas. See also the [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=404 cross-contamination sheet]
-*Silicon oxide
-*Silicon (oxy)nitride
+|
-*Photoresist
+* Almost any that do not degas. See also the [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=244 cross-contamination sheet]
-*PMMA
+|
-*Mylar
+*Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
-*Metals
-*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
 |-style="background:LightGrey; color:black"
 ! Comment
-| Tin has not yet been deposited in the Temescal to date (August 2018).
+| Resulting films are rough
-Please contact the Thin Film group if you would like us to develop the process.
+| Resulting films are very rough
+| Resulting films are rough
+| Resulting films are rough
 |}
-'''*''' ''For thicknesses above 600 nm permission is required.''