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{{cc-nanolab}}
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Nickel click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Nickel click here]'''


== Nickel deposition ==
== Nickel deposition ==
Nickel can be deposited by e-beam evaporation, sputtering or electroplating. In the chart below you can compare the different deposition equipment.
Nickel can be deposited by e-beam evaporation or sputtering at DTU Nanolab. For electroplating you will have to contact other institutes at DTU, e.g., DTU Mechanical Engineering.  
 
*[[/Electroplating of nickel|Electroplating of nickel]]
*[[/Stress Wordentec Ni films|Stress in Wordentec Ni films: study here]].


Some process information is available here for e-beam evaporated films:
<!--*[[/Electroplating of nickel|Electroplating of nickel]]-->
*[[/Stress Wordentec Ni films|Stress in e-beam evaporated Ni films: study here]] ''(from the now decommissioned Wordentec deposition tool - basic trends in results should be transferable to other e-beam evaporators).''


In the chart below you can compare the different deposition equipment:


{| border="1" cellspacing="0" cellpadding="3"  
{| border="1" cellspacing="0" cellpadding="3"  
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Ni|Electroplating-Ni]])
|-  
|-  


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! General description
! General description
|E-beam deposition of Nickel
|E-beam deposition of Nickel
|E-beam deposition of Nickel
|E-beam deposition of Nickel
|Sputter deposition of Nickel
|Sputter deposition of Nickel
|Sputter deposition of Nickel
|Sputter deposition of Nickel
|Electroplating of Nickel
|-
|-


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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Pre-clean
! Pre-clean
|Ar ion bombardment
|Ar ion etch (only in E-beam evaporator Temescal)
|RF Ar clean
|
|
|RF Ar clean
|RF Ar clean
|RF Ar clean
|None
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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! Layer thickness
! Layer thickness
|10 Å to 1 µm *
|10 Å to 1 µm *
|10 Å to 1 µm *
|10 Å to 500 nm **
|10 Å to 2000 Å
|10 Å to 500 nm **
|10 Å to 5000 Å **
|10 Å to 5000 Å **
|~ 20 µm to ~ 1000 µm
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"


! Deposition rate
! Deposition rate
|2-10 Å/s
|10-15 Å/s
|1-10 Å/s
|1-10 Å/s
|Depends on process parameters, about 1 Å/s  
|Depends on process parameters, about 1 Å/s  
|Depends on process parameters, at least ~ 4 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]]
|Depends on process parameters, at least ~ 4 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]]
|~ 10-250 Å/s


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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*Up to 3x8" wafers (ask for holder)
*Up to 3x8" wafers (ask for holder)
*Many smaller pieces
*Many smaller pieces
|
*24x2" wafers or
*6x4" wafers or
*6x6" wafers
|
*1x 2" wafer or
*1x 4" wafers or
*Several smaller pieces
|
|
* Pieces or
* Pieces or
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*Up to 10x4" or 6" wafers
*Up to 10x4" or 6" wafers
*Many smaller pieces
*Many smaller pieces
|
*1x2" wafer or
*1x4" wafer or
*1x6" wafer


|-
|-
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|
|
* Silicon
*Almost any that does not degas at your intended substrate temperature. See also the [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
*Silicon oxide
*Silicon (oxy)nitride
*Photoresist
*PMMA
*Mylar
*Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
|
|
* Silicon
* Almost any that do not degas. See also the [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=244 cross-contamination sheet]
* Silicon oxide
* Silicon nitride
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
|
|
* Silicon
*Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [https://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
* Silicon oxide
 
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
* Almost any that do not outgas.
|
*Almost any that do not outgas. Check the cross-contamination sheets in Labmanager.
|
Base materials:<br>
*Silicon
*Polymers with Tg > 75°C
*Metals (bulk)
*Cross-linked or hard baked resists supported by one of the above mentioned materials
Seed metals:<br>
* NiV (75 - 100 nm recommended)
* Ti (~5 nm) + Au (75-100 nm recommended)
* Cr (~5 nm) + Au (75-100 nm recommended)
* TiW
* Cr
|-
|-
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Comment
! Comment
|
|
*[[/Stress Wordentec Ni films|Stress in Wordentec Ni films: study here]].
|
|
|
|
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|
|
*May use high-strength magnet for deposition
*May use high-strength magnet for deposition
|
*Sample must be compatible with plating bath (pH = 3,65 and T = 52°C). Seed metal necessary.
|-
|-


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'''**''' ''To deposit a cumulative thickness above 200 nm permission is required from metal@nanolab.dtu.dk to ensure enough material is present in the machine''
'''**''' ''To deposit a cumulative thickness above 200 nm permission is required from metal@nanolab.dtu.dk to ensure enough material is present in the machine''


==Quality control of e-beam evaporated Ni films==
==Quality control of e-beam evaporated Ni films==
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality control (QC) for Wordentec'''
|bgcolor="#98FB98" |'''Quality control (QC) for the E-beam Evaporator (Temescal) and the E-beam Evaporator (10-pockets)'''
|-
|-
|
|
*[http://labmanager.dtu.dk/d4Show.php?id=3736&mach=167 QC procedure for Wordentec]<br>
Nickel deposition is tested occasionally, around 1 time per year in each machine. You are welcome to contact staff to request an extra test of the material.  
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=167 The newest QC data for Wordentec]<br>


{| {{table}}
'''LabManager links to procedures and data''' (require login):
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:300px"


! QC Recipe:
*[http://labmanager.dtu.dk/d4Show.php?id=5862&mach=429 QC procedure for the E-beam Evaporator (Temescal)]<br>
! Process 5
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=429 The newest QC data for the E-beam Evaporator (Temescal)]<br>
|-
|Deposition rate
|10 Å/s
|-
|Thickness
|100 nm
|-
|Pressure
|Below 4*10<sup>-6</sup> mbar
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:440px"
!QC limits
!Wordentec
|-
|Measured average thickness (Å)
|± 10 %
|-
|Lowest accepted deposition rate (Å/s)
|6 Å/s
|-
|}
|-
|}
Thickness is measured in 5 points with a stylus profiler.
|}


*[http://labmanager.dtu.dk/d4Show.php?id=5862&mach=511 QC procedure for the E-beam Evaporator (10-pockets)]<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=511 The newest QC data for the E-beam Evaporator (10-pockets)]<br>


{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality control (QC) for the Temescal'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5862&mach=429 QC procedure for the Temescal]<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=429 The newest QC data for the Temescal]<br>


{| {{table}}
{| {{table}}
| align="center" |  
| align="left" valign="top"|
{| border="1" cellspacing="1" cellpadding="2" align="center" style="width:400px"
{| border="2" cellspacing="1" cellpadding="2" align="left" style="width:400px"
 
! QC Recipe:
! QC Recipe:
! Standard recipes/Ni  
! Standard recipes/Ni  
|-  
|-  
|Deposition rate
|Deposition rate
|10 Å/s
|2 Å/s
|-
|-
|Thickness
|Thickness
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|-
|-
|}
|}
| align="center" valign="top"|
|-
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:440px"
|}
 
 
{| {{table}}
| align="left" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="left" style="width:400px"
!QC limits
!QC limits
!Temescal
!Both E-beam Evaporators
|-
|-
|Deposition rate deviation
|Deposition rate deviation
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|-
|-
|}
|}
Thickness is measured in 5 points with a stylus profiler. <br>
 
Additionally we examine the newly deposited films for particles using the particle scanner (if available, otherwise we use the Jenatech microscope in darkfield mode) and we monitor the sheet resistance of the Ti/Au films.
Thickness is measured in 5 points with a stylus profiler (usually DektakXT). <br>
|}
|}
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