Specific Process Knowledge/Thin film deposition/Deposition of Ruthenium: Difference between revisions
New page comparing Temescal and Lesker for Ruthenium dep. Before it was only Lesker |
|||
| (6 intermediate revisions by 3 users not shown) | |||
| Line 1: | Line 1: | ||
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Ruthenium click here]''' | |||
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i> | |||
== Deposition of Ru == | == Deposition of Ru == | ||
Ruthenium can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition | Ruthenium can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment: | ||
| Line 76: | Line 81: | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Comment | ! Comment | ||
|Please contact the thin film group before | |'''Please contact the thin film group before depositing Ru, even if Ru is in the machine.''' | ||
The current target material belongs to a specific customer. | The current target material belongs to a specific customer. | ||
Ru exhibits high stress as-deposited and has poor adhesion to Si with native oxide. | |||
| | | | ||
|} | |} | ||
'''**''' ''To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@ | '''**''' ''To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)'' | ||
'''*''' ''To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@ | '''*''' ''To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)'' | ||