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Specific Process Knowledge/Thin film deposition/Deposition of Palladium: Difference between revisions

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!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific_Process_Knowledge/Thin_film_deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System (Lesker)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System (Lesker)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! General description
! General description
| E-beam deposition of Pd
| E-beam deposition of Pd
| E-beam deposition of Pd
| Sputter deposition of Pd
| Sputter deposition of Pd
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|-style="background:Lightgrey; color:black"
|-style="background:Lightgrey; color:black"
! Pre-clean
! Pre-clean
|Ar ion source
|Ar ion source (only in E-beam Evaporator Temescal)
|none
|none
|RF Ar clean
|RF Ar clean
|RF Ar clean
|-
|-
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|10 Å - 600 nm*
|10 Å - 600 nm*
|10 Å - 600 nm*
|10 Å - 600 nm*
|10 Å - 600 nm*
|Discuss with staff
|10 Å - ? ''discuss with staff''
|-
|-
|-style="background:Lightgrey; color:black"
|-style="background:Lightgrey; color:black"
! Deposition rate
! Deposition rate
|0.5 Å/s to 10Å/s
|0.5 Å/s to 10Å/s
|2 Å/s to 10Å/s
|Up to 4.3 Å/s
|Up to 4.3 Å/s
| Not yet known - discuss with staff
| Discuss with staff
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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|
|
*Up to 4x6" wafers
*Up to 4x6" wafers
*Up to 3x8" wafers (ask for holder)
*Up to 3x8" wafers
*smaller wafers and pieces
|
*Up to 6x6" wafers (deposition on one wafer at the time)
*Up to 6x4" wafers (deposition on one wafer at the time)
*smaller wafers and pieces
*smaller wafers and pieces
|
|
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!Allowed materials
!Allowed materials
|
|
*Silicon oxide
*Almost any that does not degas
*Silicon (oxy)nitride
*Photoresist
*PMMA
*Mylar
*Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
|
|
*Silicon oxide
*Almost any that does not degas.
*Silicon (oxy)nitride
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=244 cross-contamination sheet]
*Photoresist
| Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
*PMMA
*Mylar
*Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
|
*Silicon oxide
*Silicon (oxy)nitride
*Photoresist
*PMMA
*Mylar
*Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
| Almost any that do not degas


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Comment
! Comment
|
|
|
|
|

Latest revision as of 23:21, 7 July 2025

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Unless otherwise stated, this page is written by DTU Nanolab internal

Palladium deposition

Palladium can be deposited by e-beam evaporation or DC sputtering at DTU Nanolab.

Sputtering of Palladium

Palladium may be sputter deposited in the sputter-system (Lesker). See process results here:

Equipment comparison

In the chart below you can compare the different deposition equipment:


E-beam evaporation (Temescal and E-beam evaporator (10-pockets)) Sputter deposition (Sputter-System (Lesker)) Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description E-beam deposition of Pd Sputter deposition of Pd Sputter deposition of Pd
Pre-clean Ar ion source (only in E-beam Evaporator Temescal) none RF Ar clean
Layer thickness 10 Å - 600 nm* 10 Å - 600 nm* Discuss with staff
Deposition rate 0.5 Å/s to 10Å/s Up to 4.3 Å/s Discuss with staff
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers
  • smaller wafers and pieces
  • 1x4" wafer or
  • 1x6" wafer or
  • several small samples
  • Up to 10x4" or 6" wafers
  • Many smaller pieces
Allowed materials Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for PC1 and PC3
Comment

* If depositing more than 600 nm, please write to metal@nanolab.dtu.dk well in advance to ensure that enough material is present.

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