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<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>


===Palladium deposition===
Palladium can be deposited by e-beam evaporation or DC sputtering at DTU Nanolab.


Palladium can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
==Sputtering of Palladium==
 
Palladium may be sputter deposited in the sputter-system (Lesker). See process results here:
*[[/Pd sputtering in Sputter System (Lesker) |Pd sputtering in Sputter System (Lesker)]]
 
==Equipment comparison==
In the chart below you can compare the different deposition equipment:




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!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System (Lesker)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
 
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Batch size
! General description
|
| E-beam deposition of Pd
*Up to 1x4" wafers
| Sputter deposition of Pd
*smaller pieces
| Sputter deposition of Pd
|-
|-
|-style="background:Lightgrey; color:black"
|-style="background:Lightgrey; color:black"
! Pre-clean
! Pre-clean
|Ar ion source (only in E-beam Evaporator Temescal)
|none
|RF Ar clean
|RF Ar clean
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Layer thickness
! Layer thickness
|10Å to 1µm
|10 Å - 600 nm*
|10 Å - 600 nm*
|Discuss with staff
|-
|-
|-style="background:Lightgrey; color:black"
|-style="background:Lightgrey; color:black"
! Deposition rate
! Deposition rate
|/s to 10Å/s
|0.5 Å/s to 10Å/s
|Up to 4.3 Å/s
| Discuss with staff
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Batch size
|
*Up to 4x6" wafers
*Up to 3x8" wafers
*smaller wafers and pieces
|
*1x4" wafer or
*1x6" wafer or
*several small samples
|
*Up to 10x4" or 6" wafers
*Many smaller pieces
|-
|-style="background:Lightgrey; color:black"
!Allowed materials
!Allowed materials
|
|
* Silicon oxide
*Almost any that does not degas
* Silicon (oxy)nitride
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
* Photoresist
|
* PMMA
*Almost any that does not degas.
* Mylar
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=244 cross-contamination sheet]
* SU-8
| Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
* Metals
 
|-style="background:Lightgrey; color:black"
|-style="background:WhiteSmoke; color:black"
! Comment
! Comment
|
|
|
|


|}
|}
'''*''' ''If depositing more than 600 nm, please write to metal@nanolab.dtu.dk well in advance to ensure that enough material is present.''