Specific Process Knowledge/Thermal Process/Oxidation/Standard oxidation recipes: Difference between revisions

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 '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation/Standard_oxidation_recipes click here]'''
-=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>=
+<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>
+=Standard Oxidation Recipes=
+The oxidation furnaces in the cleanroom are being used for dry and wet oxidation of silicon wafers. On this page the steps in the standard oxidation recipes on the furnaces will be listed.
+'''Dry oxidation can be done in following furnaces:'''
+*A1 Boron Drive-in and Pre-dep furnace
+*A2 Gate Oxide furnace
+*A3 Phosphorus Pre-dep furnace
+*C1 Anneal-Oxide furnace
+*C3 Anneal-Bond furnace
+*Multipurpose Anneal furnace
+<br>
+The dry oxidation recipes in the A- and C-stack furnaces are very similar and will be described on this page.
-==Recipes for dry oxidation==
+There are no standard recipes on the Multipurpose Anneal furnace, so no oxidation recipes will be described here.
+<br>
+<br>
+'''Wet oxidation can be done in these furnaces:'''
-Dry oxidation of silicon wafers can be done in these furnaces:
+*A1 Boron Drive-in and Pre-dep furnace
-* A1 Boron Drive-in and Pre-dep
+*A3 Phosphorus Pre-dep furnace
-* A2 Gate Oxide
+*C1 Anneal-Oxide furnace
-* A3 Phosphorus Drive-in
+*C2 III-V Oxidation furnace
-* C1 Anneal Oxide
+*C3 Anneal-Bond furnace
-* C3 Anneal Bond
-* C4 Al-Anneal
-The recipes for dry oxidation are very similar on these furnaces.
+The wet oxidation recipes in the A-stack, C1 and C3 furnaces are very similar.
-The oxidation and annealing times are variable commands. It means that these can be changed by the users. The maximum allowed oxidation time is ...
+However, there are a few differences in recipes, because water vapour can be generated by either a torch, a steamer or a bubbler. More information can be found on each furnace page.
+<br>
+<br>
+'''General Remarks for Oxidation Recipes:'''
-The oxidation temperatures are fixed in the recipes. The temperature can be seen in the recipe name, e.g. "DRY1000" for dry oxidation at 1000 C.
+The oxidation temperature is fixed in each recipe. The temperature can be seen in the recipe name, e.g. "DRY1000" for dry oxidation at 1000 C and "WET1100" for wet oxidation at 1100 C.
+The oxidation and annealing times are variable commands in oxidation recipe. It means that these can be changed by the users.
-===Steps in the dry oxidation recipes===
+The oxid thickness is defined by the oxidation time. Wet oxidation is much faster then dry oxidation. It is maximum allowed to grow 300 nm of dry oxide and 3 um of wet oxidation.
-*STANDBY
+The annealing improves... The standard annealing time is 20 minutes, but it is possible to change the time.
-Message: "Standby"
+<br><br>
-Temperature: 700 C
+==Dry Oxidation Process Steps==
-N2 flow: 3 SLM
-Furnace closed
+'''00 STANDBY'''
+''Message: "Standby"''
+This will be the active step, when the furnace is not in use, and when a recipe is selected.
+If a recipe is aborted, it will also jump to the STANDBY step.
+In the standby step, the furnace is closed and kept clean by an N<sub>2</sub> flow.
+*Standby temperature: 700 <sup>o</sup>C
+*N<sub>2</sub> flow: 3 SLM
+*O<sub>2</sub> flow: 0 SLM
 The user has to press "Start" (on the touch screen or furnace computer) to start the recipe.
-It a dry oxidation recipe is aborted, it will jump to the "Standby" step.
-*LM-LOCK
+'''01 LM-LOCK'''
-Message: "Standby"
-The recipe can only continue, if a user is logged on in LabManager
+The recipe can only continue, if a user is logged on in LabManager, otherwise the furnace will shown an alarm (digital input 6) after 1 minute.
+'''02 OPEN'''
+''Message: "Boat moving"''
-*OPEN
-Message: "Boat moving"
 The furnace opens
-*LOAD
-Message: "Load wafers
-Wafers are loaded in furnace.
-The user has to press "Start" (on the touch screen) or "Continue" (on the furnace computer) to close the furnace
+'''03 LOAD WAFERS'''
+''Message: "Load wafers''
+When the furnace is open, the user can load wafers in the furnace.
+The quartz boat for the wafers is located in furnace, so it has to be liftet down on the quartz plate, before the wafers are loaded.
+After the wafers are loaded, the user has to press "Start" (on the touch screen) or "Continue" (on the furnace computer) to close the furnace.
+'''04 CLOSE'''
+''Message: "Boat moving"''
+The furnace closes.
+'''05 HEAT UP'''
+''Message: "Heat-up"''
+The furnace heats up to the temperature defined in the recipe (usually 800-1150 <sup>o</sup>C).
+The recipe will continue to the next step, when the temperature of center heating zone (zone 2) reaches the right temperature.
+'''06 OXIDATION'''
+''Message: "Oxidation"''
+The dry oxidation is started by flowing O<sub>2</sub> through the furnace instead of N<sub>2</sub.
+*O<sub>2</sub> flow: 5 SLM
+*N<sub>2</sub> flow: 0 SLM
+The oxidation time is a variable command, so it can be set by the user.
+The oxidation time can be changed, until the oxidation step is started.
+'''07 ANNEAL'''
+''Message: "Anneal/Dens"''
+The O<sub>2</sub> gas is purged out of the furnace by an N<sub>2</sub> flow, so that the oxidation stop.
+The wafers are annealed in N<sub>2</sub> at the same temperature as the oxidation temperature. The annealing will improve the oxide quality by making it more dense.
+*N<sub>2</sub> flow: 6 SLM
+*O<sub>2</sub> flow: 0 SLM
+Normally the annealing time is 20 minutes, but it is a variable command, so it can be set by the user.
+The annealing time can be changed, until the annealing step is started.
-*CLOSE
-Message: "Boat moving"
-The furnace is closing
-*HEAT UP
+'''08 COOL DOWN'''
-Message: "Heat-up"
-The furnace is heating up to the temperature defined in the recipe
-The recipe will continue to the next step, when the temperature of center heating zone (zone 2) reached the right temperature
-*OXIDATION
+''Message: "Cool-down"''
-Message: "Dry oxidation"
-The dry oxidation is started
+The furnace is cooling down to 700 <sup>o</sup>C (the standby temperature)
-O2 flow: 5 SLM
-N2 flow: 0 SLM
-The oxidation time has been defined by the user. The oxidation time can be changed, until the oxidation step is started.
-*ANNEAL
+'''09 UNLOAD WAFERS'''
-Message: "Anneals/Dens"
-The standard annealing time is 20 minutes, but users can change the time. The annealing time can be changed, until the annealing step is started.
+''Message: "Unload wafers"''
+The recipe is paused, until the user presses "Start" (on the touch screen) or "Continue" (on the furnace computer).
+'''10 OPEN'''
+''Message: "Open"''
+The furnace opens.
+'''11 UNLOAD'''
+''Message: "Unload wafers"''
-Dry oxidation of III-V samples can be done in the C2 III-V Oxidation furnace, more information can be found here:
+When the furnace is open, the wafers can be unloaded.
-http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation/Oxidation_on_III-V_oxidation_furnace_(C2)
+Place the boat on the quartz plate in front of the furnace to unload the wafers. And be aware of, that the wafers are very hot, so they have to cool down for a few minutes, before they are removed from the boat.
-Dry oxidation of silicon and other materials can be done in the Multipurpose Anneal furnace and the Noble furnace, but there are not really any standard recipes on these furnaces.
+When the wafers are unloaded, the user has to press "Start" (on the touch screen) or "Continue" (on the furnace computer) to close the furnace.
+The recipe then jumps to the STANDBY step, and the user can leave the furnace, after it has closed.