Specific Process Knowledge/Characterization/Topographic measurement: Difference between revisions
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=Comparison of | =Comparison of Stylus Profilers, Optical Profilers and AFMs at Nanolab= | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!Generel description | !Generel description | ||
|Profiler for measuring microstructures. Excellent stress measurements. Excellent sequence programs. | |Profiler for measuring microstructures in cleanroom. Excellent stress measurements. Excellent sequence programs. Plus wafer mapping and roughness measurements. | ||
|Profiler for measuring microstructures. Quick and easy vertical profiling. | |Profiler for measuring microstructures in cleanroom. Quick and easy vertical profiling. Plus wafer mapping, roughness and stress measurements. | ||
|3D Profiler for measuring microstructures and surface roughness. Can do wafer mapping. | |Profiler for measuring microstructures in building 347. | ||
|3D Profiler for measuring microstructures and surface roughness. Can do wafer mapping. | |Profiler for measuring microstructures in building 346 basement. | ||
|3D Profiler for measuring microstructures and surface roughness. Can do wafer mapping. In cleanroom | |||
|3D Profiler for measuring microstructures and surface roughness. Can do wafer mapping. In basement below cleanroom. | |||
|AFM for measuring nanostructures and surface roughness | |AFM for measuring nanostructures and surface roughness | ||
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|Line scan x: 1 µm to 200mm. | |Line scan x: 1 µm to 200mm. | ||
Map scan xy: up to the largest square that can be inscribed in an 8" wafer | Map scan xy: up to the largest square that can be inscribed in an 8" wafer | ||
|Line scan x: | |Line scan x: 50 µm to 55 mm in one scan. Maximum scan length with stitching 200mm. | ||
|Line scan x: 50 µm to 55 mm | |||
|Line scan x: 50 µm to 55 mm | |||
|Depending on the objective: | |Depending on the objective: | ||
*One view: 127µmX95µm to 1270µmX955µm | *One view: 127µmX95µm to 1270µmX955µm | ||
*Stitching: In | *Stitching: In principle a whole 6" wafer (time consuming) | ||
|Only 10x objective: 2.0 mm x 1.7 mm | |Only 10x objective: 2.0 mm x 1.7 mm | ||
|90 µm square | |90 µm square | ||
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|up to 900 µm | |up to 900 µm | ||
|50 Å to 1 mm | |50 Å to 1 mm | ||
|50 Å to 1 mm | |||
|100 Å to 130 nm | |||
|Depending on the objective and Z resolution: | |Depending on the objective and Z resolution: | ||
*94.4 µm ->9984 µm | *94.4 µm ->9984 µm | ||
|10 mm (piezo range 500 µm) | |10 mm (piezo range 500 µm) | ||
|1 µm (can go up to 5 µm under special settings) | |1 µm (can go up to 5 µm under special settings) | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
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|down to 0.025 µm | |down to 0.025 µm | ||
|down to 0.003 µm | |down to 0.003 µm | ||
|down to 0.003 µm | |||
|down to 0.5 µm | |||
|Depending on the objective: | |Depending on the objective: | ||
*0.5µm -> 5µm | *0.5µm -> 5µm | ||
|Resolving power of the lens: 0.92 µm | |Resolving power of the lens: 0.92 µm | ||
|Depending on scan size and number of samples per line and number of lines - accuracy better than 2% | |Depending on scan size and number of samples per line and number of lines - accuracy better than 2% | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!Resolution z | !Resolution z | ||
|0.01, 0.08 or 0.6 Å depending on range (note resolution | |0.01, 0.08 or 0.6 Å depending on range (note resolution below 1 Å is below the noise level) | ||
|1 Å, 10 Å, 40 Å or 160 Å depending on range | |||
|1 Å, 10 Å or 20 Å depending on range | |||
|1 Å, 10 Å, 40 Å or 160 Å depending on range | |1 Å, 10 Å, 40 Å or 160 Å depending on range | ||
|Depending on measuring methode: | |Depending on measuring methode: | ||
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*Precision 0.1% | *Precision 0.1% | ||
|<1Å - accuracy better than 2% | |<1Å - accuracy better than 2% | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
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|0.866*(W[µm]-2µm) | |0.866*(W[µm]-2µm) | ||
|1.2*(W[µm]-5µm) | |1.2*(W[µm]-5µm) | ||
|1.2*(W[µm]-5µm) | |||
|1.2*(W[µm]-2.5µm) | |||
|Depending on material and trench width: | |Depending on material and trench width: | ||
*Somewhere between 1:1 and 1:12 | *Somewhere between 1:1 and 1:12 | ||
|Depending on material and trench width. | |Depending on material and trench width. | ||
|~1:1 with standard cantilever. | |~1:1 with standard cantilever. | ||
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|2 µm 60<sup>o</sup> cone | |2 µm 60<sup>o</sup> cone | ||
|5 µm 45<sup>o</sup> cone | |5 µm 45<sup>o</sup> cone | ||
|5 µm 45<sup>o</sup> cone | |||
|2.5 µm 45<sup>o</sup> cone | |||
|No tip - using light | |No tip - using light | ||
*Blue monochromatic LED: 460nm | *Blue monochromatic LED: 460nm | ||
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*White broadband LED: 550nm | *White broadband LED: 550nm | ||
|<12 nm on standard cantilever | |<12 nm on standard cantilever | ||
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|Excellent capability | |Excellent capability | ||
|Can be done | |Can be done | ||
| | |||
| | |||
|No stress calculation capability | |No stress calculation capability | ||
|Cannot be done | |Cannot be done | ||
|Cannot be done | |Cannot be done | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!Surface | !Surface Roughness | ||
|Can be done on a line or map (parallel line scans) | |Can be done on a line or map (parallel line scans) | ||
|Can be done on a line scan | |Can be done on a line scan | ||
|Can be done on a line scan | |||
|Recommend P17 or Dektak XTA | |||
|Can be done on a line or an area | |Can be done on a line or an area | ||
|Can be done on a line or an area | |Can be done on a line or an area | ||
|Can be done on a selected surface area | |Can be done on a selected surface area | ||
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|up to 8" | |up to 8" | ||
|up to 6" | |up to 6" | ||
|up to 6" | |||
|up to 4" | |||
|Up to more than 6" | |Up to more than 6" | ||
|100x100 mm | |100x100 mm | ||
|6" or less | |6" or less | ||
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!Allowed Materials | !Allowed Materials | ||
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Almost any material that leaves no residuals; please ask responsible group about non-standard materials. | |||
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Almost any material that leaves no residuals; please ask responsible group about non-standard materials. | |||
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Almost any material that leaves no residuals; please ask responsible group about non-standard materials. | |||
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Almost any material that leaves no residuals; please ask responsible group about non-standard materials. | |||
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Almost any material that leaves no residuals; please ask responsible group about non-standard materials. | |||
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Almost any material that leaves no residuals; please ask responsible group about non-standard materials. | |||
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Almost any material that leaves no residuals; please ask responsible group about non-standard materials. | |||
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|Cleanroom F-2 | |Cleanroom F-2 | ||
|Cleanroom B-1 | |Cleanroom B-1 | ||
|Building 347, SupportLab | |||
|Basement, building 346, room 904 | |||
|Cleanroom C-1 | |Cleanroom C-1 | ||
|Basement, building 346, room 904 | |Basement, building 346, room 904 | ||
|AFM Icon1: Cleanroom C-1 | |AFM Icon1: Cleanroom C-1 | ||
AFM Icon2: Basement, building 346, room 904 | AFM Icon2: Basement, building 346, room 904 | ||
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