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Specific Process Knowledge/Thin film deposition/Deposition of Platinum: Difference between revisions

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'''Feedback to this page''': '''[mailto:pvd@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Platinum click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of__Platinum click here]'''


<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
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|-style="background:silver; color:black"
|-style="background:silver; color:black"
!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! General description
! General description
|E-beam deposition of Pt
|E-beam deposition of Pt
|E-beam deposition of Pt
|Sputter deposition of Pt
|Sputter deposition of Pt
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! Pre-clean
! Pre-clean


|Ar ion source
 
|Ar ion etch (only in E-beam evaporator Temescal)
|none
|none
|RF Ar clean
|RF Ar clean
|RF Ar clean


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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Layer thickness
! Layer thickness
|10Å - 600nm*
|10Å - 600nm*
|10Å - 600nm*
|10Å - 600nm*
|10Å - 600nm*
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Deposition rate
! Deposition rate
|0.5Å/s to 10Å/s
|0.5Å/s to 10Å/s
|0.5Å/s to 10Å/s
|up to 3.74 Å/s
|up to 3.74 Å/s
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*Up to 3x8" wafers (ask for holder)
*Up to 3x8" wafers (ask for holder)
*smaller wafers and pieces
*smaller wafers and pieces
|
*24x2" wafers or
*6x4" wafers or
*6x6" wafers
|
|
*1x4" wafer or
*1x4" wafer or
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|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Allowed materials
 
! Allowed materials
|
|
*Silicon oxide
Almost any that does not degas at your intended substrate temperature. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet].
*Silicon (oxy)nitride
*Photoresist
*PMMA
*Mylar
*Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
|
|
* Silicon
*Almost any that does not degas.
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
 
|
|
* Silicon
*Almost any that does not degas at your intended substrate temperature. See cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
* Silicon oxide
* Silicon nitride
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
* Carbon
 
| Almost any that does not outgas


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Comment
! Comment
| Pt tends to exhibit tensile stress, see section on [[Specific Process Knowledge/Characterization/Stress measurement|stress in thin films]].
|
|
|
|
|
|
|}
|}


'''*''' ''If depositing a total of more than 600 nm, please write to metal@danchip.dtu.dk well in advance to ensure that enough material is present.''
'''*''' ''If depositing a total of more than 600 nm, please write to metal@nanolab.dtu.dk well in advance to ensure that enough material is present.''