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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.labadviser.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Si_sputter_in_Wordentec click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.labadviser.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Si_sputter_in_Wordentec click here]'''
'''<p style="color:red;">The Wordentec has been decomissioned in 2025. These results are kept for reference.</p>'''


= Silicon sputtering in the Wordentec=
= Silicon sputtering in the Wordentec=


Silicon can be sputter deposited in the [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]] as well as in the [[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]] (details on sputtering Si in the Sputter-System Lesker [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Lesker|here]]) and in the new [[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Cluster Lesker]] (results [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Metal-Oxide(PC1)|here]] and [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Metal-Oxide(PC3)|here]])).  
Silicon can be sputter deposited in the [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]] as well as in the [[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]] (details on sputtering Si in the Sputter-System Lesker [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Lesker|here]]) and in the new [[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Cluster Lesker]] (results [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Metal-Oxide(PC1)|here]] and [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Metal-Oxide(PC3)|here]]).  




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In November 2018 Rebecca Ettlinger and Patama Pholprasit tested Si sputter deposition in the Wordentec at '''500 W with a low sputter pressure of 2*10<sup>-3</sup> mbar''' together with Yannick Seis. The aim was a better uniformity of the sputtered film. See details in the [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&machid=167 Wordentec Process log].
It is thus possible to use a higher power together with a lower pressure, but please do not do this without consulting the [[mailto:thinfilm@nanolab.dtu.dk Thin Film group]].
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